Analysis of Surface Potential and Electric Field for Fully Depleted Graded Channel Dual-Material-Double-Gate MOSFET thro
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00256-2
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Analysis of Surface Potential and Electric Field for Fully Depleted Graded Channel Dual‑Material‑Double‑Gate MOSFET through Modeling and Simulation Himeli Chakrabarti1,2 · Reshmi Maity1 · Tijana Kevkić3 · Vladica Stojanović4 · N. P. Maity1 Received: 12 August 2019 / Revised: 20 September 2020 / Accepted: 30 October 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract This article is about an elaborative description of two dimensional investigative mathematical structure of fully depleted graded channel (GC) dual-material-double-gate (DMDG) silicon-on-insulator metal–oxide–semiconductor-field-effecttransistor (SOI MOSFET). The surface potential contours in addition with electric field variation throughout the channel establish reduction of short-channel-effects (SCEs). To get better operational analysis, some new characteristics such as temperature effect and interface charge effects have been incorporated in the model. In this representation we also incorporate the consequences of high-k dielectric medium HfO2 instead of SiO2 and have made a comparison with the effect in various frameworks. In the GC DMDG composition, the surface potential as well as electric field throughout the channel shows close to step function variations which help to defeat the hot carrier along with drain-induced-barrier-lowering (DIBL) effects. As an outcome, the structure shows that the surface potential profile increases by using GC DMDG structure over DMDG. All these outcomes of the proposed analytical representation have been compared by TCAD simulation consequence. Very good conformity is observed between them. Keywords DMDG · GCDMDG · MOSFET · High-k · Surface potential
1 Introduction MOSFET or metal–oxide–semiconductor transistor is a popular device structure [1] for many years and has become indispensable in electronic world from mid of 1960s. MOSFET is one type of field effect transistor which offers very high input impedance of the order of several MΩ. Due to very high input impedance the power consumption of the circuit is very low which helps to increase the high level * N. P. Maity [email protected] 1
Department of Electronics & Communication Engineering, Mizoram University (A Central University), Aizawl 796004, India
2
Department of Electronics and Communication Engineering, Regent Education and Research Foundation, Kolkata 700121, India
3
Department of Physics, University of Kosovska Mitrovica, Kosovska Mitrovica, Serbia
4
Department of Mathematics, University of Kosovska Mitrovica, Kosovska Mitrovica, Serbia
integration of the circuit. For these reasons only this device structure is used in CMOS logic integrated circuit at a large scale. MOSFETs are widely used as switches or amplifiers. Gate voltage mainly controls the current flow through MOSFET channel. Due to low consumption of current, very high input impedance and low noise generation, MOS
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