Anti-Parallel Circuit of Resistive Cu/TaO x /Pt Switches
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Anti-Parallel Circuit of Resistive Cu/TaOx/Pt Switches Tong Liu, Yuhong, Kang, Mohini Verma, and Marius Orlowski Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, U.S.A.
ABSTRACT Resistive switches are being explored as a candidate for ultra-dense memory as well as logic circuits. The advantages of the resistive switches include high switching speed and excellent scaling potential. Here, we report for the first time the switching behavior of antiparallel connected resistive switches (APS), which is a composite device exhibiting bidirectional switching properties. Under the opposite voltage biases, the two anti-parallel cells are alternatively set and reset, rendering the APS switched in both directions. For appropriate ON resistance values and set and reset voltages the two anti-parallel switches can be both set in conductive states. An APS device can be realized in a single switch by two coexisting Cu and oxygen vacancy nanofilaments which are formed and ruptured under opposite voltage polarities. The described APS behavior is of interest to logic applications and in neural networks. INTRODUCTION A two-terminal resistive switch has become a promising candidate device for next generations of non-volatile random access memory [1]. The resistive switching devices date back to the 1960s and are showing strong potential of reaching the scaling limit below 20 nm. It also enables the reconfigurable logic operations [2]. As a memristor combines the electrical properties of a memory cell and a resistor, simple circuits consisting of resistive switches display strikingly different I-V characteristics from conventional circuit elements [3]. This unique memristive characteristic can also be applied to neuromophic computation [4]. Recently, antiserially connected switches have been proposed, e.g., complementary resistive switches (CRS) [5] and resistive floating electrode device (RFED) [6,7]. These two circuits consist of two resistive switches connected antiserially and sharing either the same active Cu electrode (CRS) or the inert Pt electrode (RFED) electrode. Both antiserial arrangements solve the sneak path problem in crossbar achitecture [5] by storing the bit information in two states, where one switch is in a high resistance state (HRS) and the other one in a low resistance state (LRS). The fully conductive state LRS/LRS of the antiserial circuit serves only as an intermediate state for switching operations. A model for combinations of series and parallel memristors has been proposed in [8]. Here, we discuss antiparallel connected resistive switches and the resulting I-V characteristics that strongly depend on the parameters of the individual switches. The antiparallel switching behavior can also be realized in the same device based on two different ionic switching mechanisms. The novel current characteristics as a funtion of voltage and time may enable new applications in logic circuits, chaotic circuits [8], and neural networks.
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