Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays
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Complementary Resistive Switches (CRS): High speed performance for the application in passive nanocrossbar arrays Roland Rosezin1, Eike Linn2, Lutz Nielen2, Carsten Kügeler1, Rainer Bruchhaus1, and Rainer Waser1,2 1
Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and JARA –
Fundamentals for Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany 2
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen, 52074 Aachen, Germany
ABSTRACT In this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation nonvolatile memory based on passive nanocrossbar arrays. INTRODUCTION The term “resistive switching” denotes a vast field of voltage induced resistance change effects observed in simple, two terminal metal-isolator-metal structures [1]. The non-volatile nature of this resistance change as well as the high operation speed and scaling potential make devices based on this effect prime candidates for future high density data storage applications [2]. The field of resistance change phenomena can be divided into different classes according to the underlying physical principle. A number of material systems can be classified as electrochemical metallization (ECM) and valence change mechanism (VCM) type resistive switching materials [3]. Although the physical principles of the switching in these two classes are different, both show bipolar resistive switching, requiring different voltage polarities for switching to the low resistance state (LRS) and high resistance state (HRS) [4]. A very promising architecture for the integration of resistive switching devices is the passive crossbar array. In these crossbar arrays, a minimum area consumption of 4F² (F being the feature size) can be achieved, because each storage node consists only of a resistive switching element. Due to the lack of select transistors, current sneak paths can occur, which strongly limit the practical size of these arrays. For bipolar resistive switching materials, a promising solution has been suggested to alleviate sneak paths and make large, passive crossbar arrays possible: the complementary resistive switch (CRS) [5]. In CRS cells, two bipolar switching devices are connected antiserially. Thus, the information is stored as a combination of resistance states (HRS/LRS and LRS/HRS), which results in an overall high resistance for the CRS cell. Consequently, no pattern dependence can give rise to sneak paths. In this paper, we present the fabrication and electrical characterization of CRS cells based on Cu-SiO2 memristive elements [6]. These elements were
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chosen due to their excellent switching per
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