Cerium-doped SnO 2 nanomaterials with enhanced gas-sensitive properties for adsorption semiconductor sensors intended to
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Cerium-doped SnO2 nanomaterials with enhanced gassensitive properties for adsorption semiconductor sensors intended to detect low H2 concentrations George Fedorenko1,*
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, Ludmila Oleksenko1, Nelly Maksymovych1, and Inna Vasylenko2
Taras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kiev 01601, Ukraine L.V. Pisarzhevskii Institute of Physical Chemistry of National Academy of Science of the Ukraine, 31 Nauky Ave., Kiev 03028, Ukraine
Received: 30 April 2020
ABSTRACT
Accepted: 30 August 2020
Highly sensitive to H2 sensors were created on the base of material obtained through tin (II) oxalate oxidation by hydrogen peroxide water solution. It has been established that the addition of 0.1 wt% Ce to the sensor materials significantly increases response values of the sensors to hydrogen micro-concentrations in air (44 ppm H2). Nanoscale nature of the obtained sensor materials was confirmed by transmission electron microscopy and X-ray diffraction analysis. The average particle size of the obtained 0.1 wt% Ce/SnO2 sensor materials was found to be 10.6 nm. The sensors doped with 0.1 wt% Ce exhibit enhanced gas sensing properties: a wide concentration range of H2 detection in air, relatively high selectivity to hydrogen and good repeatability of the response to H2 during long-term sensor operation (2 months). Analysis of the previously reported data has revealed a promising combination of high sensitivity to hydrogen and fast response time with low Ce loading for sensors based on Ce/SnO2 material obtained in this work.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
Introduction Tin dioxide is widely used in several branches of modern technologies and environmental protection: luminescence and photocatalytic devices [1–4], transistors creation [5], photovoltaic devices [6–8], etc. One of the most promising applications of SnO2 is its Handling Editor: Kevin Jones.
Address correspondence to E-mail: [email protected]
https://doi.org/10.1007/s10853-020-05199-w
usage as gas-sensitive material in adsorption semiconductor sensors due to the ability of tin dioxide to chemisorb oxygen and change its electrical conductivity as a result of the processes occurring on SnO2 surface [9]. Adsorption semiconductor sensors exhibit low power consumption, have small dimensions, devices on their base are compact and sensitive to air contamination by different reducing gases [10–18]. It
J Mater Sci
is known that responses of the sensors based on undoped polycrystalline tin dioxide can be insufficient or such sensors demonstrate poor response time and recovery time [19, 20] that requires some modification of SnO2 by different catalytically active additives (mainly noble metals and 3d-metals). Such addition leads to an increase in the sensitivities of the adsorption semiconductor sensors to target gases. In particular, the active additives increase the rates of catalytic oxidation of the reducing gases (e.g., hydrogen, carbon monoxide, volatile organic compounds) by oxygen chemisorbed on the sur
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