Chimney-Shaped and Plateau-Shaped Gate Electrode Field Emission Arrays
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ABSTRACT A triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrixaddressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography. INTRODUCTION Field-emission devices have been extensively studied because of their potential applications to high-frequency devices, flat panel displays, microscopy, lithography, and microsensors [1]-[4]. Research on the application to flat panel displays has become more extensive in recent years as a result of the attractive characteristics of field-emission devices, such as low voltage, small volume, simple fabrication, and high redundancy. To realize the flat panel displays, field emitters with high current density, excellent uniformity, and vertical structure are desired. Some field emitters with high current density have been investigated. Wedge [5], lateral thin-film [6]-[8] and crater-shaped silicon field emitters [9] are very promising for applications requiring high current density. However, wedge and lateral thinfilm field emitters are not suitable for imaging devices because the pixels of imaging devices are approximately square and have vertical structure. On the other hand, the emission current of crater-shaped n-type silicon field emitters is only comparable to that of cone-shaped n-type silicon field emitters at the high electric field. With the aim of obtaining a field emitter with high current density, excellent uniform structure of the emitters, and vertical structure, both chimney-shaped metal diode and plateau gated triode field-emission devices are presented in this paper. In addition to the structure of the field emitters, the novel fabrication technique, and electrical characteristics are discussed in detail. Results show that these chimney-shaped metal field-emission devices have the merits of high current density and the requirement of only one photolithography mask for the entire process. In addition, anode current without degradation phenomenon is observed in the chimney-shaped Cr diode field emitters. EXPERIMENTAL PROCEDURES The fabricated process of chimney-shaped metal diode emitter has been described in our 15 Mat. Res. Soc. Symp. Proc. Vol. 509 01998 Materials Research Society
previous work [10]. Fig. I shows the processing sequence of the chimney-shaped emitter and plateau-shaped gate field-emission triodes. The chimney-shaped metal field-emission devices were fabricat
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