Compact Modeling Principles, Techniques and Applications
Compact Models of circuit elements are models that are sufficiently simple to be incorporated in circuit simulators and are sufficiently accurate to make the outcome of the simulators useful to circuit designers. The conflicting objectives of model simpli
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Gennady Gildenblat Editor
Compact Modeling Principles, Techniques and Applications
Editor Dr. Gennady Gildenblat Motorola Professor of Electrical Engineering Arizona State University University Drive and Mill Avenue Tempe, AZ 85287-9309 USA [email protected]
ISBN 978-90-481-8613-6 e-ISBN 978-90-481-8614-3 DOI 10.1007/978-90-481-8614-3 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2010929773 © Springer Science+Business Media B.V. 2010 No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without written permission from the Publisher, with the exception of any material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Cover design: eStudio Calamar Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
Models of circuit elements which are sufficiently simple to be incorporated in circuit simulators and are sufficiently accurate to make the outcome useful to circuit designers are called compact. The conflicting objectives of model simplicity and accuracy make the compact modeling field an exciting and challenging research area for device physicists, electronic engineers and applied mathematicians. Continued down-scaling of semiconductor devices has made it necessary to incorporate new physical phenomena, while extended applications have led to the inclusion of the secondary and ternary effects in order to achieve the required model accuracy. In addition several rigid requirements in terms of model continuity and qualitative behavior (“benchmarks”) have been imposed over the years. At the same time, the increased size of the integrated circuits, that can now be subjected to the full SPICE analysis, disallowed proportional increase in the model execution time. Hence considerable effort went into compact model reformulation in such a way that dramatically increased accuracy and model sophistication are accomplished without prohibitive decrease in the computational efficiency. The models of MOS transistors underwent revolutionary change in the last few years and are now based on new principles. The recent models of diodes, passive elements, noise sources and bipolar transistors were developed along the more traditional lines. Following this evolutionary development they became highly sophisticated and much more capable to reflect the increased demands of the advanced integrated circuit technology. The latter depends on the compact models for the shortening of the design cycle and eliminating the elements of overdesign which is often undesirable in today’s competitive environment. At the same time, statistical modeling of semiconductor devices received new significance following the dramatic reduction of the device dimensions and of the power supply voltage. Finally, despite the complexity of the fabri
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