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A3B3 SEMICONDUCTOR

GENNADY S.KOROTCHENKOV, VICTOR A.MICHAILOV Laboratory of Microelectronics, Technical University of Moldova. Bid. Stefan cel Mare, 168. Chisinau, 277012, Moldova.

ABSTRACT In this article the analysis of Auger-profiles of anodic oxide-semiconductor structures, which were formed on the base of InP, InGaAs and InGaAsP was made. It was determined that anodic oxide-InP interface has minimum thickness of intermediate layer between oxide and semiconductor. It got the thermodynamic substantiation of the effects observed. INTRODUCTION The results of the research, presented in the articles [1,2], testify, that InP MOS structures with own oxides have a minimum density of interface surface states near the bottom of conduction band among the most of A3B5 semiconductor compounds. To the latter, GaAs, InGaAs, and InGaAsP compounds are refereed which also as InP are materials for application in SHF-electronics [3]. However this situation-increased density of interface surface sets in MOS structures limits the application of these compounds for using of MOS-technology.

METHODOLOGY OF EXPERIMENT Ager, t, un.

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0.8-

P-i

In

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CT)

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As

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'- 1"(396eV)

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6

semiconductors; a)- InP (d.,,=50 rnm), b)- In 0o 53Ga0 ,47As (d0,=58 nm), c)- Ino 0 89Gao. 11Aso,24Po 76 (d.= 58 nm).

0,(503W•rs~ e ) InW4o6•W

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/

c). P02-... (,2Oev)

As(V2a eW

S(1224 eW

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b)

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Ga(1066oev

fno0, 3Gao,,As 10

Fig. 1 Auger-profiles (Vetc=2 nm/min) of own anodic oxides for

(406W

""•/'9od

0.2

40

.0 ev,

0.6-1 0.4

""

20

224o

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30

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te,rain.

503

Mat. Res. Soc. Symp. Proc. Vol. 355 01995 Materials Research Society

In this report we discuss the causes of that situation. For this purpose we have conducted the comparative analysis of Auger-profiles of own oxide-semiconductor structures, which have been

formed on the base of InP, GaAs,

In0.47Ga0 .53As

and

In0.8 9Ga 011 As0. 24P 0 .76 compounds.

For objective analysis, forming of all own oxide-semiconductor structures and measurement of Auger-profiles for all structures were made in identical conditions. InP, GaAs, InGaAs, InGaAsP own oxides have formed by anodic oxidation in aquatic solution of citrate ammonium (10- 2M):propilenglicole=1:3 (pH=5-6). Thickness of own oxides were equal to 50-60 nm. Methods of oxidation and measurements were described in article [1,4]. The results of these research work are presented in fig. 1. Auger-profiles for own oxide-GaAs structures are similar to Auger-profiles of own oxide-InGaAs structures. Therefore this profiles are not shown in fig. 1. One should say, that most characteristic difference of the Auger-profiles of anodic oxide-InP structures is condition of interface. Anodic oxide-InP structures have minimum thickness of transitional layer and breach of stoichiometry of semiconductor (A 3/B 5 ) in this region is the least

expressed. If for own oxide-InP struct