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CONTROL AND VARIATION OF STRESS IN PECVD SiN x FILMS ON InP J. LOPATA, W. C. DAUTREMONT-SMITH AND J. W. LEE AT&T Bell Laboratories, Murray Hill, NJ 07974 ABSTRACT Stress in plasma enhanced chemical vapor deposited (PECVD) SiNx films on InP has been evaluated as a function of source gases (NH 3 /SiH 4 or N 2 /SiH 4 ) and plasma operating frequency (high, >> 1 MHz or low,

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