Crypto primitive of MOCVD MoS 2 transistors for highly secured physical unclonable functions
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Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions Bangjie Shao1, Tsz Hin Choy1, Feichi Zhou1, Jiewei Chen1, Cong Wang1, Yong Ju Park2, Jong-Hyun Ahn2 (), and Yang Chai1 () 1 2
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Received: 14 May 2020 / Revised: 4 August 2020 / Accepted: 4 August 2020
ABSTRACT Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick MoS2 thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of MoS2 transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of MoS2 FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials.
KEYWORDS transition metal dichalcogenides, two-dimensional materials, physical unclonable function, metal-organic chemical vapor deposition, field-effect transistor
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Introduction
The huge amounts of edge devices in Internet of Things (IoT) require us to create unique identification for correct communication between them [1–4]. An ideal security identification for edge devices is featured with the capability to prevent counterfeit and unauthorized duplication. Physical unclonable functions (PUFs) have been regarded as promising roots-oftrust cryptographic hardware keys for authentication or chain protection with irreproducibility and high-level security [4, 5]. Existing PUFs are mainly designed based on conventional Si complementary metal-oxide-semiconductor (CMOS) technologies with easy access and high integration level, such as, Arbiter PUF and ring oscillator PUF [6–8]. However, such devices with local mismatches can be easily physically attacked by various techniques, e.g., machine learning [9, 10]. Therefore, it still requires to further improve the robustness of PUF for practical applications. The electronic devices based on nanomaterials have been shown with inherent physical disorder, which potentially provides more robust and tamper-resistant security primitives. Previous studies exhibit natural randomness of nanomaterials by different preparatio
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