• PDF / 1,504,263 Bytes
• 6 Pages / 420.48 x 639 pts Page_size
• 8 Downloads / 169 Views

DOWNLOAD

REPORT

DEFECT REDUCTION OF CVD-GROWN CUBIC SiC EPITAXIAL FILMS ON OFF-AXIS Si(100) SUBSTRATES WITH A NOVEL OFF-DIRECTION. KATSUKI FURUKAWA, NAKAJIMA Central Research Development Group, Nara 632, Japan.

YOSHIHISA

FUJII,

AKIRA

SUZUKI,

AND

SHIGEO

Laboratories, Corporate Research and Sharp Corporation, 2613-1 Ichinomoto, Tenri,

ABSTRACT Monocrystalline cubic SiC (j6 -SiC) thin films with lower defect densities have been epitaxially grown by chemical vapor deposition on off-axis Si (100) substrates with off-directions different from the conventional

Recommend Documents

SiC epitaxial growth on porous SiC substrates

209 62 437KB

Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates

196 33 821KB

Epitaxial Ge Films on Si Substrates

220 73 292KB

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

304 114 2MB

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

148 12 474KB

Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates

183 30 398KB

Epitaxial Films of Faas and Fan on Fianit Substrates

189 38 1008KB

Growth of 3C-SiC Layers on Silicon Substrates with a Novel Stress Relaxation Structure

169 83 857KB

Structural Characterization of Sic Epitaxial Layers Grown on Porous Sic Substrates

169 77 3MB

Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers

189 108 2MB

Spectroscopic Properties of Cubic SiC on Si

174 17 218KB

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

194 40 7MB