Development of a silicon oxide-based resistive memory device using a spin-on hydrogen silsesquioxane precursor
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Resistive memory devices have the potential to replace flash technology due to their increased scalability, low voltage of operation, and compatibility with silicon semiconductor manufacturing. We report a spin-on resistive switching material, hydrogen silsesquioxane (HSQ), which is a commonly used electron beam resist. We demonstrate device scalability from 100 lm to 48 nm and show that the switching properties do not depend on the device size. Set voltages were typically ,3 V, while reset voltages were ,1 V when analyzing the positive unipolar switching properties of these devices. The ratio of the high resistance to the low resistance was ranged from 101 to 102, creating a distinct memory window between the memory states. Composition–depth profiling revealed that copper from the bottom electrode migrated into the HSQ films as a result of annealing. It is therefore speculated that copper may play a role in the switching properties of devices based on this material.
I. INTRODUCTION
Resistive memory devices (RMDs), or resistive random access memory, are emerging devices for next-generation nonvolatile memory (NVM) applications due to their scalability, endurance, low operating voltage, and compatibility with complementary metal oxide semiconductor (CMOS) processing.1–3 The basic structure of a RMD consists of an insulating material (I) sandwiched between two metal electrodes (M), which creates a switchable MIM structure. Devices are switched from the off state (or high resistance state, HRS) to the on-state (or low resistance state, LRS) by biasing one metal electrode and grounding the other in a process termed a set operation. During the set process, a current compliance, ICOMP, is imposed to prevent the device from dielectric breakdown. The first set operation of the device may be termed a forming process if a larger voltage or ICOMP is required for the first set than subsequent sets of the device. The reset operation occurs when the device is biased such that it transitions from the LRS to the HRS. If the set and reset occur in the same polarity (positive or negative voltage), the device is referred to as a unipolar device, while if the set and reset occur in opposite polarities, the device is known as a bipolar device. Devices that exhibit both unipolar and bipolar switching behavior are known as nonpolar devices. Insulating materials that have been used within RMDs include metal oxides, perovskites,4 and chalcogenides.5 a)
Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2012.390 3110
J. Mater. Res., Vol. 27, No. 24, Dec 28, 2012
http://journals.cambridge.org
Downloaded: 28 May 2014
Of these, numerous metal oxides have been extensively researched as potential candidates for RMDs including: TiOx,6 HfOx,7 TaOx,8 ZnOx,9,10 CuOx,11,12 NiOx,13 and SiOx.14–18 Silicon oxide RMDs have great potential for resistive memory applications because of the ubiquitous use of silicon oxide in traditional CMOS manufacturing. Tour et al.19–21 have demonstrated the resistive switching properti
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