Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morphology
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Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morphology D.I. FLORESCU*, D.S. LEE*, J.C. RAMER*, V.N. MERAI*, A. PAREKH*, D. LU*, E.A. ARMOUR*, and W.E. QUINN* * Veeco Compound Semiconductor, Advanced Technology Group, 394 Elizabeth Avenue, Somerset, NJ 08873, USA ABSTRACT In this study, we investigate the dependence of GaN surface morphology on the absolute strain values for thin (
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