Direct-readout pressure sensor based on AlGaN/GaN heterostructure
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TECHNICAL PAPER
Direct-readout pressure sensor based on AlGaN/GaN heterostructure Xin Tan1 • Yuanjie Lv1 • Xinye Zhou1 • Yuangang Wang1 • Xubo Song1 • Xuelin Yang2 • Bo Shen2 Zhihong Feng1 • Shujun Cai1
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Received: 1 July 2017 / Accepted: 10 March 2018 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2018
Abstract Based on the excellent piezoelectricity of AlGaN/GaN heterostructures, a pressure sensor was fabricated combined with micro machining technology. Direct readout was realized by adopting Wheatstone bridge structure and the sensor showed favourable pressure responses. At the operation voltage of 5 V, the fabricated AlGaN/GaN pressure sensor exhibited a sensitivity of 7 lV/kPa with low non-linearity of 0.8% over a wide pressure range (from 0.1 to 5 MPa). As far as we know, this is a recorded responsive sensitivity in the reported direct-readout AlGaN/GaN pressure sensor.
1 Introduction GaN-based high electron mobility transistors (HEMTs) have been commercialised in high-power and high-frequency applications because of their wide bandgap, high electron density, and high electron mobility (Rais-Zadeh et al. 2014). These exists two-dimensional electron gas (2DEG) at the heterostructure interface as induced by spontaneous and piezoelectric polarisation. Piezoelectric polarisation is related to the strain in the AlGaN barrier layer, which can be affected by external pressures. As a result, observable changes in channel conductivity happened under different pressure conditions (Kang et al. 2003, 2004). Moreover, GaN also possesses many advantages such as high biocompatibility, high thermal and mechanical stability, and excellent irradiation resistance. All of the above advantages suggest that GaN-based devices have great potential for solid-state pressure sensor applications in harsh environments (Zimmermann et al. 2006; Chang et al. 2009; Son et al. 2005). Many great jobs have been done to verify the possibilities for GaN-based HEMTs in pressure sensing applications and various kinds of devices have been put forward (Vanko et al. 2011; Boulbar et al. 2013; Dzuba et al. 2015a, b). However, those reported sensor devices such as & Yuanjie Lv [email protected] 1
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
2
School of Physics, Peking University, Beijing 100871, China
circular HEMT, cantilever structure or capacitor structure, are both need additional switching diaphragm topologies to realize direct readout. In practical applications, the signal in voltage form can be gathered easier rather than resistance, current, charge and so on. The Wheatstone bridge circuit can convert the pressure response of resistance into voltage output, which has been commercialized in piezoresistive silicon pressure sensor. Here, for the first time, a pressure sensor with a Wheatstone bridge structure based on the AlGaN/GaN/Si membrane was fabricated. Measurements were conducted under different conditions to investigate the pr
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