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DOPANT REDISTRIBUTION IN TITANIUM SILICIDE/n RAPID THERMAL PROCESSING

POLYSILICON BILAYERS DURING

C. B. COOPER III, R. A. POWELL AND R. CHOW Varian Associates, Inc., Corporate Solid State Laboratory 611 Hansen Way, Palo Alto, CA 94303

ABSTRACT The successful use of rapid thermal processing in an isothermal mode to form Ti polycide structures is described. The silicide was sputter deposited from a composite Ti-Si target onto phosphorus-doped poly-Si. The resulting polycide structure was annealed by exposure to the blackbody radiation from a resistively-heated graphite heater. Rapid diffusion of the P into the Ti silicide is observed even for short annealing times, although resulting P concentra18 3 tions in the silicide (

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