E-MRS Holds 1988 Spring Meeting in Strasbourg
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g, W. Germany); Powders and Raw Materials—D. Seyal (ESD, Oxon, United Kingdom); and Superconductors—N. Nygren (Stockholm University, Sweden). Symposium B—Photon, Beam, and Plasma-Assisted Processing Fundamentals and Device Technology Chairmen: I.W. Boyd (Department of Electronic and Electrical Engineering, University College London, United Kingdom); E.F. Krimmel (Siemens A.G., Munich, W. Germany). This symposium will highlight poten-' tial applications of emerging technologies using lasers, incoherent light, charged particle beams and plasmas to enhance or induce epitaxy, surface and interface chemistry, and phase transformation processes. Emphasis will be on interaction and process mechanisms, processinduced defects, preparation of materials, and impact on device processing. Invited speakers include: Bicknell (Wurzburg, W. Germany); Briones (CNM, Madrid, Spain; Mihaelescu (Bucharest, Romania); Trundle (Plessey, U.K.); Hickstein (CNET, France); R. Lawes (Rutherford AL, U.K.); J. Nijs (IMEC, Belgium); Eisele (Munich, W. Germany); Fotakis (Crete, Greece); R. Jackson (IBM, San Jose, CA, U.S.A.) G. Loper (Aerospace Corp, LA, U.S.A.); F. Harriott (AT&T Bell Labs, NJ, U.S.A.); R.B. Jackman (Oxford, U.K.); R. Burcke or C. Pomot (CNET, Meylan, France). Symposium C—Deep Implants: Fundamentals and Applications Chairmen: G.G. Bentini (CNR - Istituto LAMEL, Bologna, Italy); A. Golanski (CNET Grenoble, Meylan, France); S. Kalbitzer (MPI h i Kernphysik, Heidelberg, W. Germany). This symposium will highlight the experimental and theoretical aspects of the physical and technological problems involved in new applications of high energy (MeV) ion beams. Topics include: range and damage distributions, doping profiles, chemical layer formation, new characterization techniques, new applications of high energy ion beams, high energy implanted VLSI device fabrication, high energy implantation induced defects and their impact on device performance, and machines for high energy ion implantation. Invited speakers include: H. Baumgart (Philips Research Labs, Eindhoven, Netherlands); J.P. Biersack (Hahn-MeitnerInstitut fur Kernforschung, Berlin, W. Germany); E.H. Te Kaat (University of Dortmund, Netherlands); A.M. Mazzone
(CNR-LAMEL, Bologna, Italy); J. Middelhoek (University of Twente, Netherlands); J. Poate (AT&T Bell Labs, NJ, U.S.A.); O. Puglisi (University of Catania, Italy); S. Saris (FOM Institut, Amsterdam, Netherlands); and A.N. Saxena (Rensselaer Polytechnic Institute, NY, U.S.A.). Symposium D—Preparation and Properties of Mestable Alloys Chairmen: K. Samwer (G. August Universitaet, Gottingen, W. Germany); M. von Airmen (CM S.A., Bienne, Switzerland); J. Bottiger (Institute of Physics, Aarhus, Denmark); B. Stritzker, IFF-KFA, Jiilich, W. Germany). This symposium will bring together scientists involved in both basic and applied research to focus on the fundamental relationships of the formation of metastable alloys, such as amorphous alloys and microcrystalline alloys, and their applications. Invited speakers include: W.L. Johnson (Ca
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