Effect of Metal Oxide Nanoparticles on Carbon Nanotube Device Characteristics
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https://doi.org/10.1007/s11664-020-08579-9 Ó 2020 The Minerals, Metals & Materials Society
ORIGINAL RESEARCH ARTICLE
Effect of Metal Oxide Nanoparticles on Carbon Nanotube Device Characteristics NARENDRA KUMAR ,1 NAVEEN KUMAR NAVANI,2 and SANJEEV KUMAR MANHAS 1,3 1.—Department of Electronics and Communication Engineering, Indian Institute of Technology (IIT), Roorkee, Uttarakhand 247 667, India. 2.—Department of Biotechnology, Indian Institute of Technology (IIT), Roorkee, Uttarakhand 247 667, India. 3.—e-mail: [email protected]
In this paper, we investigate the reduction of the Schottky barrier (SB) height at the metal and semiconducting single-walled carbon nanotube (SWNT) junction by the decoration of SWNTs using metal oxide nanoparticles (NPs). Interdigitated electrodes are fabricated (finger length 40 lm, width 3 lm, with space of 3 lm) on thermally grown silicon dioxide substrate. Thereafter, the SWNTs are aligned between the interdigitated electrodes. Following the decoration of SWNTs using metal oxide NPs, the devices are characterized. Decoration of SWNTs with metal oxide NPs reduces the SB height significantly. We find a reduction of SB height by 91 meV with titanium dioxide (TiO2) NPs and 150 meV with zinc oxide (ZnO) NPs. As compared to the bare SWNTs, the conductance of the devices improves by 1.5X and 2.1X due to the decoration of the SWNTs using TiO2 and ZnO NPs, respectively. This technique is of vital importance in decreasing the response time and enhancing the switching speed of the CNT-based sensors. Key words: Decoration, metal oxide nanoparticles, Schottky barrier height, semiconducting carbon nanotubes, semiconducting single-walled carbon nanotubes
INTRODUCTION The semiconductor industry has continued the scaling of transistors since 1965 following Moore’s law in order to fulfill the increasing market demand for smaller and lower cost electronics equipment. Recently, Samsung, IBM, and others have announced the manufacturing of 5-nm node technology. This shows that the semiconductor industry is still following Moore’s law. Many experts have posited an end to Moore’s law; however, scientists and engineers have continued to develop innovative ways to scale transistors. Moreover, the scaling is used not only for transistors but also for heterogeneous multifunctional devices, e.g., sensors and smartphones. Therefore, various heterogeneous
(Received July 1, 2020; accepted October 20, 2020)
technologies are used to combine multifunctional devices for the single revolutionary system known as ‘‘More than Moore’’.1–4 The International Technology Roadmap for Semiconductors (ITRS) has reported that silicon (Si)based device dimensions will become in the range of few nanometers in 2020–2025, and thereafter, the dimension reduction will be impossible. Therefore, to further reduce the cost of electronics equipment, revolutionary semiconductor materials such as semiconducting carbon nanotubes (CNTs) and 2-D materials are likely replace Si devices.1,4 The CNT is an emerging material for the fabricat
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