Effects of annealing process on thermoelectric performance for Pb-doped BiCuSeO
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Effects of annealing process on thermoelectric performance for Pb-doped BiCuSeO Yue-Xing Chen1 , Ruoyang Li1,2, Zhuchen He1,2, Zhuanghao Zheng1, Fu Li1,*, Jingting Luo1, and Ping Fan1 1
Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China 2 College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
Received: 31 August 2020
ABSTRACT
Accepted: 13 October 2020
In this work, we investigated the effects of annealing process on thermoelectric performance for Pb0.06Bi0.94Cu0.94SeO sample. Under the appropriate annealing time of 573 K, the electrical conductivity was significantly improved on the premises of a higher carrier concentration. As a result, a high power factor of 1096 lWm-1 K-2 was achieved at 323 K. Furthermore, the lattice thermal conductivity obviously decreased as the annealing time rose up to 3 days, which mostly benefited from the stronger phonon scattering and the precipitation of the second phase. Consequently, for the Pb0.06Bi0.94Cu0.94SeO sample annealed for 1 day, a maximum ZT value of 0.85 was obtained at 873 K, which was 57% and 12% higher than those of pristine BiCuSeO and un-annealed sample, respectively. This work proposes an effective post-treatment strategy to enhance the thermoelectric properties of BiCuSeO-based compounds.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Thermoelectric (TE) materials bring a source of possibility to address the problems provoked by energy shortage and environmental degradation. With the TE effects as the basis, the TE materials can convert waste heat into electricity directly or serve as electronic refrigeration [1–3]. Currently, one of the most essential subjects in TE field is to pursue truly high dimensionless figure of merit ZT to improve the energy conversion efficiency, in which ZT is usually defined as ZT = Sr2T/j, where S, r, j, and T are
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https://doi.org/10.1007/s10854-020-04675-y
Seebeck coefficient, electrical conductivity, thermal conductivity, and absolute temperature, respectively. Despite that traditional TE materials exhibit excellent performance, and they usually contain rare or toxic element, are costly, and are environmentally hazardous. In consequence, traditional TE materials usually have limited application. Furthermore, TE materials should be chemically and thermally stable at the critical application environment. Therefore, many researchers have shifted their eyes to metal oxides, which offset the vacancies of the traditional materials [4–6]. However, ZT values for most of TE oxides are lower than those of the state-of-the-
J Mater Sci: Mater Electron
art ones due to their poor transport properties and high lattice thermal conductivity, both of which originate from the low carrier concentration and weak phonon scattering of the simple crystal structures and light elements, respectively [4, 7, 8]. To ta
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