Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

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Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector Atsushi Motogaito, Keiichi Ohta, Kazumasa Hiramatsu, Youichiro Ohuchi1, Kazuyuki Tadatomo1, Yutaka Hamamura2 and Kazutoshi Fukui3 Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan 1 Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4-3 Ikejiri, Itami, Hyogo 664-0027, Japan 2 Nikon Corporation, Precision Equipment Company, 1-10-1 Asamizodai, Sagamihara, Kanagawa 228-0828, Japan 3 Research Center for Development of Far-Infrared Region, Fukui University, 3-9-1 Bunkyo, Fukui, Fukui 910-8507, Japan ABSTRACT Characterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effective to operate in UV and VUV light (50