Growth and Device Performance of GaN Schottky Rectifiers
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Internet Journal Nitride Semiconductor Research
Growth and Device Performance of GaN Schottky Rectifiers Jen-Inn Chyi 1, C. -M. Lee1, C.C.Chuo1, G. C. Chi2, G. T. Dang3, A. P. Zhang3, Fan Ren 3, X.A. Cao4, S.J. Pearton4, S. N. G. Chu5 and R. G. Wilson6 1Department
of Electrical Engineering,National Central University,Taiwan, of Physics, National Central University, 3Department of Chemical Engineering, University of Florida, 4Department of Materials Science and Engineering, University of Florida, 5Bell Laboratories, Lucent Technologies, 6Consultant,Stevenson Ranch,CA, 2Department
(Received Monday, June 21, 1999; accepted Thursday, August 19, 1999)
Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit VRB2/ RON, where VRB is the reverse breakdown voltage and RON is the on-resistance, was ~ 4.53 MWcm-2 at 25°C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present in the GaN.
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Introduction
There is strong interest in the development of efficient switches operating in the power ranges between 100 kW-1 MW and well above 1 MW. [1] [2] In the former category the applications include improved control over power distribution on the electricity grid, and electrical sub-systems in electric automobiles, advanced aircraft ships and combat vehicles. An important need is for high efficiency, lightweight, ~100 kW dc-to-ac inverters to drive the ac induction motors for propulsion and dcto-dc converters for storage-to-bus energy conversion. [1] [2] In the latter category is improved transmission and control of electric power by the utilities industry. It is anticipated that the packaged semiconductor switches will need to operate at temperatures in excess of 250°C without liquid cooling. [1] [2] [3] [4] For these high temperature, high power applications the wide bandgap semiconductors offer many advantages. While SiC is the leading candidate for these switches because of its more mature growth and processing technology [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] (Al)GaN is also of interest for these applications because of its larger bandgap and excellent transport properties. [1] [4] [6] One of the baseline devices in power switching is the thyristor. The combination of a thyristor, power diode and appropriate packaging produces an inverter module.
Schottky barrier diodes are employed as high-voltage rectifiers in power switching applications. They can be turned-off faster than junction diodes because of the absence of minority carrier storage effects and there is negligible power dissipation during switching. [5] [7] [8] There have been numerous reports of SiC Schottky diode rectifiers, some employing edge termination techniques to avoid field crowding at the
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