Electrical and Photoluminescence Properties of Mg + and C + Implanted Acceptors in InP.
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ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF Mg+ and C+ IMPLANTED ACCEPTORS IN InP. A.C. BEYE, A. YAMADA, A. SHIMIZU 1 ,H. SHIBATA, H. TANOUE, K.M. MAYER, H. SUGIYAMA, K. KAMIJOH 2 , T. ODA 3 , 0. ARRIGA 3 , I. AKIYAMA 4 , N. KUTSUWADA 4 ,T. MATSUMORI 5, S. UEKUSAI and Y. MAKITA. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan. 1. Meiji University, Higashi-mita 1-1-1, Tama-ku, Kawasaki-shi, 214 Japan. 2. 0. T. R. L., 5-5 Tokodai, Tsukuba-shi, Ibaraki-ken, 300-26 Japan. 3. Nippon Mining Co., Ltd., 3-17-35 Niizo-Minami, Toda-shi, 335 Japan. 4. N. I. T., Gakuendai 4-1, Miyashiro-cho, MinamiSaitama-gun, 345 Japan. 5. Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Japan. ABSTRACT Implantation of Mg+ and C+ ions is carried out in bulk lnP substrates using single or several energies up to 400 keV. The net carrier concentration profile at 300K is measured by capacitance-voltage (C-V) method. The ground and excited states binding energies of Mg and C acceptors are determined by lowtemperature selective excitation of photoluminescence (PL). Additional sharp exciton-like emissions are detected after annealing of the samples. Their intensity is found to decrease with increasing Mg+ or C+ dose. Annealinginduced activation and/or formation of complex defect are the likely candidate mechanisms for the involved defect. INTRODUCT'ION Optoelectronic device applications [1-41 require the characterization
of
impurities in semiconductors such as InP and its related compounds [5-14). Ion
implantation is one of the commonly used method for the identification of involved chemical species. In this paper, results of selective-excitation of photoluminescence (SPL) of Mg+ -and C+-implanted bulk InP grown by liquid encapsulated Czochralski are reported. The SPL spectra exhibit two-hole replica of Mg-acceptor bound exciton (BE) and PL lines involving DAP transitions to the Mg acceptor excited states. The emission properties of some annealing-induced defects are also discussed. EXPERIMENTAL Nominally undoped InP wafers are used for flat-profile ion-implantation with Mg+ as well as C+ with several energies up to 400 keV. Another series are implanted with Mg+ using single energy of 100 keV. Samples are then encapsulated with 1500A thick SiNx using plasma chemical vapor deposition at 3700C. Furnace annealing is done at 700 0 C during 15 or 20 min under H2 flow. After removal of the encapsulant in HF, the carrier concentration at 300K is measured by C-V method using Schottky contacts of electrolytic acid solution HCI (5%) + H20 (95%) acting as etchant. PL measurements are performed at 2K. Chemical etching down to I gm from the surface is used in order to reach part of the sample where the carrier concentration is comparable to that of the unimplanted wafer. The PL excited with an Ar+ pumped dye laser, is collected from the etched area, to resolve acceptor -BE and -excited state emissions. Mat. Res. Soc. Symp. Proc. Vol. 163. @1990 Materials Research Society
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RESULTS AND DISCUSSION The PL spectra (fig.
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