Electrical Properties of Compound Semiconductor Heterostructures
The p-n junction and metal–semiconductor junction are the basic building blocks of modern electronic devices such as diodes and transistors. Under the equilibrium condition, a potential barrier is formed at these junctions such that no net charge carriers
- PDF / 24,053,819 Bytes
- 540 Pages / 453.543 x 683.15 pts Page_size
- 90 Downloads / 290 Views
Keh Yung Cheng
III–V Compound Semiconductors and Devices An Introduction to Fundamentals
Graduate Texts in Physics Series Editors Kurt H. Becker, NYU Polytechnic School of Engineering, Brooklyn, NY, USA Jean-Marc Di Meglio, Matière et Systèmes Complexes, Bâtiment Condorcet, Université Paris Diderot, Paris, France Morten Hjorth-Jensen, Department of Physics, Blindern, University of Oslo, Oslo, Norway Bill Munro, NTT Basic Research Laboratories, Atsugi, Japan William T. Rhodes, Department of Computer and Electrical Engineering and Computer Science, Florida Atlantic University, Boca Raton, FL, USA Susan Scott, Australian National University, Acton, Australia H. Eugene Stanley, Center for Polymer Studies, Physics Department, Boston University, Boston, MA, USA Martin Stutzmann, Walter Schottky Institute, Technical University of Munich, Garching, Germany Andreas Wipf, Institute of Theoretical Physics, Friedrich-Schiller-University Jena, Jena, Germany
Graduate Texts in Physics publishes core learning/teaching material for graduate- and advanced-level undergraduate courses on topics of current and emerging fields within physics, both pure and applied. These textbooks serve students at the MS- or PhD-level and their instructors as comprehensive sources of principles, definitions, derivations, experiments and applications (as relevant) for their mastery and teaching, respectively. International in scope and relevance, the textbooks correspond to course syllabi sufficiently to serve as required reading. Their didactic style, comprehensiveness and coverage of fundamental material also make them suitable as introductions or references for scientists entering, or requiring timely knowledge of, a research field.
More information about this series at http://www.springer.com/series/8431
Keh Yung Cheng
III–V Compound Semiconductors and Devices An Introduction to Fundamentals
123
Keh Yung Cheng Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign Urbana, Illinois, USA Department of Electrical Engineering National Tsing Hua University Hsinchu, Taiwan
ISSN 1868-4513 ISSN 1868-4521 (electronic) Graduate Texts in Physics ISBN 978-3-030-51901-8 ISBN 978-3-030-51903-2 (eBook) https://doi.org/10.1007/978-3-030-51903-2 © Springer Nature Switzerland AG 2020 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publi