Transistor Level Integration of Compound Semiconductor Devices and CMOS (CoSMOS
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Figure 5 Cross sectional diagram illustrating the final HRL COSMOS transistor connections
Figure 6 Photos of large area HBTs fabricated on die-bonded material.
HBT FABRICATION ON Si HRL has successfully fabricated large area transistors on Si wafers using the MatBond process. A photo of large area transistors is shown in Figure 6 and a forward Gummel plot is shown in Figure 7. The Forward Gummel plot exhibits excellent current gain but some minor base-collector leakage. This leakage is not expected to have an impact on the designs of interest using CoSMOS technology which typically would operate at high bias currents.
B a s e ,C o lle c to r C u r r e n t ( A )
1E+00 1E-01 1E-02
Fwd Gummel (VCE=1.2V) AE=400µm2, AC=1148µm2
1E-03 1E-04
2
10 GHz. This reduction largely comes from the ability to eliminate or reduce the need for level shifting circuitry commonly required for bipolar circuits. CONCLUSIONS In this paper, we have presented an approach for integration of CMOS with InP HBTs that can enable dramatically increased dynamic range and bandwidth while reducing power consumption for mixed-signal circuits needed for DoD systems. ACKNOWLEDGEMENTS This work was supported in part by DARPA through AFRL contract FA8650-07-C-7714 (CoSMOS). The authors would like to the rest of the staff of the HRL Microelectronics group for their assistance in obtaining the results presented in this paper. REFERENCES 1. D. A. Hitko, T. Hussain, J. F. Jensen, Y. Royter, S. L. Morton, D. S. Matthews, R. D. Rajavel, I. Milosavljevic, C. H. Fields, S. Thomas III, A. Kurdoghlian, Z. Lao, K. Elliott, M. Sokolich, ‘A Low Power (45mW/latch) Static 150GHz CML Divider’, 2004 Compound Semiconductor IC Symposium. 2. T. Hussain, D. A. Hitko, Y. Royter , R. D. Rajavel, K. Elliott, K. McCalla, M. Madhav, M. Sokolich,’ Low Power (51mw per Flip-Flop) CML Static Divider Implemented In Scaled 0.25 µm Emitter-Width InP DHBTs, 2005 InP and Related Materials Conference.
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