Electrochemistry of metal adlayers on metal chalcogenides
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Electrochemistry of metal adlayers on metal chalcogenides G. A. Ragoisha 1 & Y. M. Aniskevich 1,2 & A. S. Bakavets 1,2 & E. A. Streltsov 2 Received: 30 April 2020 / Revised: 27 May 2020 / Accepted: 28 May 2020 # Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Electrodeposition of metal adlayers on semiconductor metal chalcogenides (CdSe, CdS, PbTe, PbSe, PbS, Bi2Te3) is reviewed. Cathodic underpotential deposition of metal adlayer on metal chalcogenide is the electrochemically irreversible surface limited reaction. The irreversibility of the upd increases in the row from tellurides to selenides and further to sulfides. The underpotential shift on chalcogenide nanoparticles increases with particle size. Metal upd on chalcogenides is applied as a means of measurement of electroactive surface area of chalcogenide electrodes. The method is especially advantageous for multicomponent systems with other component not supporting upd, such as CdSe-TiO2, CdSe-ZnO. Differences of voltammetric profiles of Pb upd on Bi2Te3 and Te are applied for detection of Bi2Te3 surface contamination by elemental tellurium. The further tasks in the electrochemistry of metal adlayers are their incorporation as interlayers in layered chalcogenides and electrodeposition of superlattices. Keywords Metal adlayer . Underpotential deposition . Chalcogenides . Telluride . Tellurium . Selenide
Introduction Electrodeposition of a metal atomic layer (adlayer) on a foreign substrate proceeds under thermodynamic conditions different from those of the electrodeposition on the same metal substrate. The difference which results from effect of substrate is characterized by the “underpotential shift” ΔEupd of the adlayer deposition potential vs. corresponding Nernst potential E(Me n + /Me b u l k ), where Me b u l k is bulk metal. Underpotential deposition (upd) of metal adlayers on metals and their anodic oxidation have been comprehensively reviewed [1–7], a less elucidated is the electrochemistry of metal adlayers on nonmetals, such as chalcogens [8, 9], while the electrochemistry of metal adlayers on metal chalcogenides misses review literature, despite great significance of metal adatoms, submonolayers, and adlayers as intermediates in electrodeposition of metal chalcogenides [10] and the lately developed electrodeposition of metal-metal chalcogenide Dedicated to Professor F. Scholz on the occasion of his 65th birthday * G. A. Ragoisha [email protected] 1
Research Institute for Physical Chemical Problems, Belarusian State University, 220006 Minsk, Belarus
2
Belarusian State University, Nezalezhnastsi Av. 4, 220030 Minsk, Belarus
superlattice structures [11]. Metal adlayer on semiconductor metal chalcogenide is also an interesting probe object for characterization of size dependences of physical and physicochemical properties of semiconductor nanoparticles [12, 13]. Due to correlations of underpotential shift with the semiconductor nanoparticle size, the routine measurement of quantum dot (QD) size by optical spectr
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