Emerging low-dimensional materials for mid-infrared detection
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ng Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA 90089, USA Mork Family Department of Chemical Engineering and Material Science, University of Southern California, Los Angeles, CA 90089, USA
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Received: 28 June 2020 / Revised: 1 September 2020 / Accepted: 11 September 2020
ABSTRACT Mid-infrared (IR) detectors based on the emerging low-dimensional (two-dimensional and quasi one-dimensional) materials offer unique characteristics including large bandgap tunability, optical polarization sensitivity and integrability with typical silicon process, which are not available in the mid-IR detectors based on traditional compound semiconductors. Here, we review the recent progress in study of mid-IR detectors based on the low-dimensional materials, including black phosphorus, black arsenic phosphorus, tellurene and BaTiS3, from the perspectives of crystal structure, material synthesis, optical properties, and the detector characteristics. The detector gain and detectivity are benchmarked, and the unique properties, such as the polarization sensitivity, are discussed. We also provide our perspective about key future research directions in this field.
KEYWORDS mid-infrared detector, anisotropy, low-dimensional, gain, detectivity
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Introduction
Mid-infrared (IR) detectors [1, 2], typically operating in the 3–5 and 8–14 μm wavelength range corresponding to the atmospheric transmission windows as shown in Fig. 1, have broad commercial and medical applications in advanced sensing, imaging and detection, such as sensing the tail flame of aerial vehicles and objects, optical image at night and temperature of human body [3–6]. The traditional materials used in the mid-IR detectors are the compound semiconductors, such as PbSe [7], HgCdTe [8] and InGaAs [9], which face challenges in the integration with the complementary metal–oxide– semiconductor (CMOS) process and typically result in relatively bulky terminal devices [10–14]. Recently, the low-dimensional materials, i.e. two-dimensional (2D) and quasi-one-dimensional (1D) materials, with narrow or zero bandgap have emerged as promising candidates for mid-IR detection [15–25]. Graphene is a gapless 2D material that can lead to photodetector capable of covering the entire IR range [26–35]. However, due to the relatively weak absorption and large dark current, the performance of the graphene based mid-IR detector is limited [28, 36]. Low-dimensional semiconductor, such as black phosphors (BP) [37–39], black arsenic phosphorus (b-AsP) [40–42], Tellurene (Te) [43–45] and BaTiS3 (BTS) [46–48], can enable mid-IR detectors with high responsivity and detectivity [16–18, 21, 24, 25]. Due to their self-terminated material surface resulting from their layered van der Waals (vdW) lattices, most of these materials can be easily integrated with the silicon platform and processed with the standard nanofabrication, resulting in good CMOS compatibil
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