Charge-Trapping Non-Volatile Memories Volume 2--Emerging Materials a
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of t
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ChargeTrapping Non-Volatile Memories Volume 2—Emerging Materials and Structures
Charge-Trapping Non-Volatile Memories
Panagiotis Dimitrakis Editor
Charge-Trapping Non-Volatile Memories Volume 2—Emerging Materials and Structures
123
Editor Panagiotis Dimitrakis Department of Microelectronics Institute of Advanced Materials Athens Greece
ISBN 978-3-319-48703-8 DOI 10.1007/978-3-319-48705-2
ISBN 978-3-319-48705-2
(eBook)
Library of Congress Control Number: 2016956818 © Springer International Publishing AG 2017 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer International Publishing AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Contents
1 Materials and Device Reliability in SONOS Memories . . . . . . . . . . . . Krishnaswamy Ramkumar 2 Charge-Trap-Non-volatile Memory and Focus on Flexible Flash Memory Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Konstantina Saranti and Shashi Paul 3 Hybrid Memories Based on Redox Molecules . . . . . . . . . . . . . . . . . . . Nikolaos Glezos
1
55 91
4 Organic Floating Gate Memory Structures . . . . . . . . . . . . . . . . . . . . . 123 S. Fakher, A. Sleiman, A. Ayesh, A. AL-Ghaferi, M.C. Petty, D. Zeze and Mohammed Mabrook 5 Nanoparticles-Based Flash-Like Nonvolatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer . . . . . . . . . . . 157 E. Verrelli and D. Tsoukalas Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
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Chapter 1
Materials and Device Reliability in SONOS Memories Krishnaswamy Ramkumar
1.1
Introduction
Non-volatile memories for data and code storage have been growing rapidly in performance and capacity over last few decades. With the advent of the many widely used consumer electronic gadgets such
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