Excimer Laser Induced Oxidation of Silicon: Characterization of the Oxide Stoichiometry in the Interface Region
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EXCIMER LASER INDUCED OXIDATION OF SILICON: CHARACTERIZATION OF THE OXIDE STOICHIOMETRY INTHE INTERFACE REGION D. A. MANTELL AND T. E.ORLOWSKI Xerox Webster Research Center, 800 Phillips Rd., Webster, NY 14580 ABSTRACT New results on the ultrafast laser-induced formation of high-quality patterned silicon dioxide (Si0 2 ) layers on silicon substrates at room temperature are presented. Using a pulsed ArF excimer laser (X = 193 nm) operating at pulse energies near the melting threshold of silicon, SiO 2 layers can be grown at a rate of 3-4 A/pulse with an oxygen pressure of 500 torr. This growth rate exceeds by a factor of 5 the rate found using a XeCI excimer laser (X = 308 nm) indicating that oxygen atoms produced by the direct photodissociation of oxygen by the ArF excimer laser play a role in achieving this extremely fast oxidation rate. Careful analysis of the laser exposed regions following each laser shot was performed using angle-resolved XPS with 150 micron spatial resolution. After one laser shot, a nonstoichiometric SiO. interface layer (
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