Fabrication of SiN-assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-band MMICs for 60GHz WPAN system
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0969-W03-10
Fabrication of SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-Band MMICs for 60GHz WPAN System Hokyun Ahn, Jong-Won Lim, Hong-Gu Ji, Woo-Jin Chang, Jae-Kyoung Mun, and Haecheon Kim RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
ABSTRACT In this paper, the fabrication technology of SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-band MMICs for high rate personal area network (WPAN) systems is described. The effect of the gate shape, such as the 1st-deck and the 2nd-deck gate head size, on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size are also presented. A 0.22um, the optimum, 1st-deck gate head size and 1um 2nd-deck head size p-HEMT device with two finger gates of length 0.12um and 50um width showed an extrinsic transconductance of 529mS/mm and a threshold voltage of -1.19V. The cut-off frequency and the maximum frequency of oscillation were 94.7GHz and 189.1GHz, respectively. The gate dimensions of the p-HEMT device, for example the gate head size, are correlated to parasitic device capacitances, including Cgs, which effect the RF performance including the cut-off frequency (fT) and maximum frequency of oscillation (fmax). INTRODUCTION Recently, millimeter wave applications such as high speed wireless communications, collision avoidance car radar systems and millimeter wave video transmission systems have been developed. Unlicensed 60GHz-bands are of growing interest for high rate personal area networks (WPAN) (IEEE 802. 15. 3) and high rate wireless local area networks (WLAN). [1] Millimeter wave MMICs for such applications have been fabricated through a III-V compound-based technology related to active devices such as GaAs-based HEMT, InP-based HEMT and InPbased HBT. [2]. p-HEMT devices are especially widely utilized as active devices for millimeter wave MMICs due to their excellent and stable RF performance. [3] The gate shape of the pHEMT device as well as the gate foot length has a major effect on parasitic capacitances, including the gate-to-source capacitance (Cgs), which are correlated to RF performance including the cut-off frequency (fT) and maximum frequency of oscillation (fmax). In this work, we describe the fabrication technology for SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs pHEMT and 60GHz-band MMICs for the high rate personal area network (WPAN) system. This paper also presents the effect of the gate shape, such as the 1st-deck and the 2nd-deck gate head size, on the DC and RF characteristics of SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT devices as well as the device performance of the p-HEMT at the optimum gate head size. The gate shape of the p-HEMT device, for example the gate head size,
is correlated to parasitic capacitances, including Cgs, that have effects on RF performance including fT and fmax. EXPERIMENT The double planar doped AlGaAs/InGaAs
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