Flexible solution-processed high-voltage organic thin film transistor
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6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and pentacene-based high-voltage organic thin film transistors (HVOTFTs) have been fabricated on solid and flexible substrates via a low-temperature (,100 °C) solution-processed and vacuum-deposited fabrication method. A high-k dielectric Bi1.5Zn1Nb1.5O7 and an organic dielectric parylene-C have been incorporated into the transistor design. The reliability of the HVOTFTs was analyzed under flexure, where a nonsaturating I–V characteristic behavior was observed. Here, the HVOTFT exhibited a mobility l of 0.018 cm2/(V s) and a large breakdown voltage of jVDSj . 120 V and .550 V for TIPS-pentacene and pentacene devices, respectively. The large breakdown voltages are attributed to an organic semiconductor channel region which is partially gated, allowing for a large potential drop. Thiolphenol-based SAMs were used to help improve charge injection. Electrical measurements were also performed with samples designed with a top metal field plate to improve control of the charge carrier within the channel.
I. INTRODUCTION
Organic semiconductors have played an integral role in the development of cheap, reliable, and efficient electronic devices. The organic light emitting diodes, organic photovoltaics, and organic field effect transistors (OFETs) have already found their way into the consumer mass market.1–4 Due to their mechanical flexibility, room temperature processing, large area depositions, biodegradability, and low processing costs, organic semiconductors have proven useful in developing novel applications over the past few decades. This has resulted in various innovations such as flexible displays,5 electronic skin and fabric,6 cheap and disposable RFID tags,7 anti-counterfeiting banknotes,8 as well as biosensors.9 The trend of miniaturization of complementary metaloxide-semiconductor (CMOS) electronics has brought about a quasi-ubiquitous electronics revolution. However, a truly-ubiquitous electronic world is yet to be achieved, where electronics are no longer confined to planar surfaces but are allowed to be placed onto any arbitrarily shaped and dynamic surface. Continuing research on improving mechanical reliability in an extreme and repeated flexure, on optimizing the organic fabrication procedures, as well as on reducing processing costs is needed for the widespread adoption of organic electronics.10 A further trend for truly ubiquitous electronics is also required, in which
Contributing Editor: Sam Zhang a) Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2017.428
the organic electronic devices are designed to be highly versatile in their performance. In terms of transistor behavior, OFETs have already consistently achieved a mobility between 0.01 and 10 cm2/(V s), with single crystal 5,6,11,12-tetraphenyltetracene (rubrene) OFETS pushing 40 cm2/(V s).11 This performance is comparable or even surpasses that of typical hydrogenated amorphous Si (a-Si:H) thin film transistors (TFTs) used in liquidcrystal displays.12 Here, we have
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