Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimenta
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HYSICS OF SEMICONDUCTOR DEVICES
Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study S. K. Jaina, A. M. Joshia,*, and D. Bhartia a Department
of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur, India *e-mail: [email protected] Received June 25, 2020; revised June 25, 2020; accepted July 6, 2020
Abstract—Physics-based two-dimensional numerical simulations are performed to analyze the device characteristics of tri-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique. Further, using simulation technique enabling calibration this paper also presents the systematic study of the impact of active layer (TIPS-pentacene) thickness on device characteristics. The extracted parameters such as electric field intensity, current density, current On/Off ratio, and mobility exhibit variation with scaling down in active layer thickness from 500 to 100 nm. The study also revealed that Off current and On/Off current ratio (IOn/IOff) is highly dependent on the thickness of the semiconductor layer. Furthermore, the highest value of IOn/IOff is obtained at 100-nm thickness of TIPS-pentacene, which can be used for various fast-switching applications in digital circuits. Simulated results are not only reasonably matching with experimental results but also provide insight on charge transportation at the semiconductordielectric interface and in the bulk of TIPS-pentacene layer. Keywords: semiconductor thickness, mobility, organic thin-film transistor DOI: 10.1134/S106378262011010X
1. INTRODUCTION Organic semiconductors have shown great potential to replace the conventional amorphous silicon (aSi) as the material for active matrix displays on thinfilm transistors (TFTs). Organic electronic materials are superior to inorganic materials in terms of low-cost manufacturing capability. Research based on organic semiconductors has developed large-area electronic devices such as OTFT, organic light-emitting diodes (OLEDs), organic solar cells (OSC), etc. OTFTs offer a wide range of applications over the past two decades, such as low-cost displays [1], organic memories [2], key radio-frequency tags [3], polymer circuits, and sensors [4]. The performance of OTFT for real-time commercial applications depends on various parameters such as On-to-Off current ratio, mobility, current density, electric field, and the threshold voltage in the device [5]. These parameters are often affected by the combination of the various active materials, the geometry of the device, thin-film particle size, trap state, and thickness of semiconductor layers [6, 7]. To improve device performance, it is necessary to understand the behavior of semiconductor layer and semiconductor-dielectric interface because it extremely affects the charge transport in the device due to charge
localization [8]. The performance of the device degrades significantly due to defects availa
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