Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/ n -Si Structures

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Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures Ahmet Muhammed Akbas¸1,*

, Osman C ¸ ic¸ek2, S ¸ emsettin Altındal3, and Y. Azizian-Kalandaragh4,5


Department of Advanced Technologies, Institute of Science and Technology, Gazi University, Ankara, Turkey Faculty of Engineering and Architecture Department of Electrical-Electronic Engineering, Kastamonu University, Kastamonu, Turkey 3 Faculty of Sciences, Depratment of Physics, Gazi University, Ankara, Turkey 4 Department of Physics, University of Mohaghegh Ardabili, Ardabil, Iran 5 Deprtment of Engineering Sciences, Sabalan University of Advanced Technologies (SUAT), Namin, Iran 2

Received: 12 September 2020


Accepted: 10 November 2020

This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure such as diffusion potential (VD), doping donor density (ND), Fermi energy level (EF), maximum electric field (Em), depletion layer thickness (Wd), and barrier height (ΦB) are derived by using the intercept and slope of C−2–V–ƒ plot for each frequency. Additionally, the energy density distribution of surface states (Nss) and their relaxation time values (τ) are also attained from the conduction method and their values are found as 4.999 9 1012 eV−1 cm−2 and 2.92 µs at 0.452 eV, and 3.857 9 1012 eV−1 cm−2 and 164 µs at 0.625 eV, respectively. The lower Nss values are the consequence of passivation effect of the used nanographite (NG)-PVP polymer interlayer. As a result, the polymer interlayer based nanographite (NG)-PVP is candidate instead of the widely used oxide/insulator layer for the purpose of decreasing the surface states or dislocations.


Springer Science+Business

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1 Introduction Recently, metal–semiconductor (MS) structures have become very popular for scientists, engineers, and technology companies in line with the needs of growing electronic industry. Additionally, MS structures with an interfacial insulator, ferroelectric and

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organic layer for developing new electronic devices are very important for fast switching applications with low voltage drop in the radio frequency, microwave and terahertz power and communication electronics [1–6]. Among these interfacial layer materials, organics/polymers have some advantages like low cost, flexibility, easy grown method, low-

J Mater Sci: Mater Electron

temperature production, high strength, low molecular weight compared to the insulators. In traditional applications, the interfacial layer is generally an insulator/oxide layer like SiO2 and SnO2 which are called as metal-oxide/insulator-semiconductor (MOS or MIS) structures [7, 8]. In the MS structure with an interfacial layer