Frontiers

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Symposium "X" was an experiment with a totally new form of symposium. Firstly, it was designed to be an educational/review affair. Secondly, it was run at an awkward hour - right through lunch. Thirdly, it cut across all the symposia and hence had no direct loyal following. The council and the organizers took a flyer on this one. But the symposium lived up to it's X rating. Everyone rated the talks as Xcellent, and the attendance was Xtraordinary-between 100-250 attended in spite of the inconvenience. The symposium was organized as one of the MRS's first ventures in education, and sponsored jointly with the Educational Modules for Materials Science and Engineering project. As textbooks in all all engineering fields price themselves out of the market (R.W. Cahn's Metallury is more than $100), the community must devise—for industrial re-training as well as university education in materialsnew approaches to pedagogical hardware. The EMMSE project is now a self-help effort by the worldwide materials community. It is run by a national committee of industrial and university scientists and engineers and based at Penn State. EMMSE's journal, from which any subscriber can copy—with no copyright restrictions—comes out six times a year. Additional material is being offered in microfiche. At the Boston meeting, a total of seven distinguished speakers lectured on topics of general interest to the membership. Topics included the TEM as a Structural tool, Phase Diagrams, Intercalated Graphite, Dislocations and Grain Boundaries in Silicon, Defects in compound

Semiconductors, Ion Beam and Laser Techniques, and Photoelectrochemical Energy Conversion. The list of presentors included some of the MRS's most distinguished members: John M. Thomas of Cambridge University, R. E. Watson of Brookhaven, M. Dresselhaus of MIT, H. J. Quiesser of the Max Planck Institut in

Stuttgart, F. C. Kroger of USC, F. Young of Oak Ridge, and Mark Wrighton of MIT.

RUSTUM ROY The Pennsylvania State University

SYMPOSIUM B Co-Chairmen S. Mahajan (left) of Bell Laboratories and J.W. Corbett of the Department of Physics at SUNY-Albany presided over a session that attracted a total of 69 papers on the general subject Defects in Semiconductors. The meeting, with principal support from the Office of Naval Research (L. Cooper) and the Defense Advanced Research Projects Agency (S. Roosild), focused first on the effects of oxygen clustering and precipitation, the behavior and identification of native defects present at high temperatures and the physics of transition metal impurities in silicon. Secondly, it sought to evaluate the situation regarding fundamental defect studies, impurity levels and dislocation glide and climb in compound semiconductors. Thirdly, it focused on the interrelationship between growth- and processing-induced defects and device performance. The fruits of the symposium will be published as a volume in the Society's Proceedings.

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