Growth of a Ge Layer on a Si/SiO 2 /Si(100) Structure by the Hot Wire Chemical Vapor Deposition
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition A. A. Sushkova,*, D. A. Pavlova, S. A. Denisova, V. Yu. Chalkova, R. N. Kryukova, and E. A. Pitirimovaa a Lobachevsky
State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia *e-mail: [email protected]
Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—Ge/Si layers are formed on Si/SiO2/Si(100) substrates and are investigated for different growth temperatures. The Si layer is grown by molecular-beam epitaxy, while the Ge layer is produced by the hot wire chemical vapor deposition. Structural studies are carried out using high-resolution transmission electron microscopy and reflection high-energy electron diffraction. Such structures are promising for the growth of high-quality light-emitting structures on them, which are compatible with silicon radiation-resistant integrated circuits. It is shown that a single-crystal Ge layer can be grown on Si/SiO2/Si(100) via a Si buffer layer by the hot wire chemical vapor deposition, and the difficulties arising during the growth of Ge/Si layers on Si/SiO2/Si(100) are demonstrated. Keywords: heteroepitaxy, transmission electron microscopy, molecular-beam epitaxy, hot wire chemical vapor deposition, silicon-on-insulator DOI: 10.1134/S1063782620100309
1. INTRODUCTION Currently, the problem of creating efficient lightemitting structures which are compatible with silicon radiation-resistant complementary metal—oxide— semiconductor (CMOS) technology remains unsolved. An approach to this problem consists in the formation of high-quality layers of group-III–V semiconductors (having a direct-gap energy structure) on radiation-resistant Si/SiO2/Si(100) (silicon-on-insulator, SOI) and Si/Al2O3(1 1 02) (silicon-on-sapphire, SOS) heterostructures [1]. In this study, we will consider SOI structures, which are also referred to as substrates because they are used as a basis for growing other semiconductors. SOIs have all the advantages of bulk Si substrates: a high mechanical strength in comparison with III–V materials (GaAs, InP, etc.), low production cost in comparison with other semiconductor materials (GaAs, InP, Al2O3, etc.), and an abundance of Si in nature; moreover, they possess some new properties: electrical insulation between the device Si layer and the Si substrate. Due to this, SOI are actively used as a basis for producing high-efficiency low-power radiation-resistant integrated circuits [2–5]. The technology of growing III–V semiconductor layers on Si substrates via a Ge transition layer formed by different methods [6–9] (including the hot wire chemical vapor deposition [10, 11]) is considered well-
developed [8, 12]. Hot wire chemical vapor deposition (HW CVD) has several advantages among analogs: no need to use expensive equipment providing high vacuum, low growth temperature (~350°C), high growth rate with retained high quality of the Ge
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