Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
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Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young-HoBa and Hyun Kyung Cho MRS Internet Journal of Nitride Semiconductor Research / Volume 8 / January 2003 DOI: 10.1557/S109257830000048X, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S109257830000048X How to cite this article: Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young-HoBa and Hyun Kyung Cho (2003). Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications . MRS Internet Journal of Nitride Semiconductor Research, 8, pp e5 doi:10.1557/S109257830000048X Request Permissions : Click here
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Internet Journal Nitride Semiconductor Research
Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications Jae-Hoon Lee1, Myoung-Bok Lee1, Sung-Ho Hahm1, Yong-Hyun Lee1, Jung-Hee Lee1, Young- Ho Bae2 and Hyun Kyung Cho3 1School of Electronic Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, 2Division of Information and Electronics, Uiduk University, Gyeongju 780-910, Korea, 3Department of Metallurgical Engineering, Dong-A University, Busan, 604-717, Korea,
(Received Friday, July 4, 2003; accepted Wednesday, August 13, 2003)
Semi-insulating undoped GaN films were grown based on controlling the size of the nucleation sites through a special two-step growth method: First, 16 nm LT-GaN was annealed at 950 ° with a ramping time of 4 min, then the GaN was grown at this temperature for 1 min. Second, the growth temperature was increased to 1020° with a ramping time of 2 min and the GaN layer finally grown at 1020 ° for 40 min. The film grown by this sequence exhibited sheet resistance of up to 109 Ω/sq with mirror-like surface morphology. By slow ramping to 950° in the initial phase of growth, smaller grain sizes and higher nuclei densities were formed and the columnar growth mode along the c direction was dominant. The observation of higher resistance in two-step growth is believed due to the increased misorientation of nuclei when the growth proceeds during temperature ramping to 1020°. The fabricated saw filter on semi-insulating GaN exhibited a high velocity of 5342 m/s at center frequencies of 133.57 MHz and an electromechanical coupling coefficient(k2) of about 0.763 %, which was enhanced due to the improvement of surface morphology with high sheet resistance by the two- step ramping technique.
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Introduction
GaN and related III-nitrides are very promising materials for the fabrication of optoelectronic devices [1] and high power and high temperature electronic devices [2] [3]. AlGaN/G
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