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in acetone. All of the etching was performed in a Plasma Therm 790 series reactor. The samples were thermally bonded to a Si carrier wafer on a He backside cooled, rf powered (13.56 MHz) chuck. This power was used to control the incident ion energy. The ion flux and plasma dissociation was controlled by the power into the ICP source (2 MHz, 100-1000W). Gas injection into this source was metered through electronic mass flow controllers at a typical load of 15 standard cubic centimeters per minute (sccm). In some cases a Hg arc lamp (400 W) was installed on 1 inch diameter quartz window on the top of the ICP source, -20 cm from the sample position. This was used to provide UV illumination of the sample surface during plasma etching. Sample heating due to the lamp is minimal (

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