High efficiency deposition of diamond film by hot filament chemical vapor deposition
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High efficiency deposition of diamond film by hot filament chemical vapor deposition Yan Chen,a) Qijin Chen, and Zhangda Lin State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People’s Republic of China (Received 20 March 1995; accepted 29 July 1996)
A new designed reaction chamber with new relative distribution of filament and substrates has been adopted in order to increase the deposition area of diamond films and thus increase the deposition efficiency in conventional hot filament chemical vapor deposition (HFCVD) systems. The relatively small reaction chamber was cuboid shaped (50 3 25 3 25 mm3 ) and composed of molybdenum wafers. It was established in the vacuum chamber. A tungsten filament was hung up vertically in the center of the small chamber and parallel to the gas flow path. At the four inner sides of the reaction chamber, four Si(100) substrates (30 3 10 3 0.5 mm3 ) were installed to grow diamond films. The deposition results indicate that uniform diamond films can be obtained on the four substrates, and the film growth rate is the same at both ends of the substrates. The diamond film growth rate was about 1–2 mmyh, which is similar to those of the conventional HFCVD method. Thus, the deposition area and efficiency can be increased four times in the case without the filament number, gas flow rate, and power consumption.
Since Spitsyn’s et al. report1 in 1981, many chemical vapor deposition methods have been developed for diamond growth, such as hot filament CVD (HFCVD),2 microwave plasma (MPCVD),3 RF-,4 plasma jet,5 and O2 –C2 H2 flame,6 etc. Because of its high potential application in wear resistance, optical, heat sink, and semiconducting devices, many researchers have been trying to industrialize it. Large area deposition of diamond film has been studied intensively,7 especially by HFCVD, MPCVD, and plasma jet. However, some problems are still unsolved. HFCVD is an attractive candidate among various methods though there exist some disadvantages such as its low growth rate, impurities, etc. In most cases, the substrate size or deposition area is approximately equal to the filament distribution area or even smaller. When the deposition area increases further, some technical problems become prominent. For example, it is a little difficult to keep the filaments straight and stable; meanwhile, the deposition efficiency was not increased and seems quite low too, and the growth rate reaches hardly more than 10 mmyh because of its relatively low filament temperature compared to that of plasma jet and O2 –C2 H2 flame.8 In this paper, we report a new designed reaction chamber in which we have changed the setup of the
a)
Address all correspondence to this author. Present address: Department of Physics and Astronomy, York University, North York, Ontario Canada M3J 1P3. J. Mater. Res., Vol. 11, No. 12, Dec 1996
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filament and the substrates to increase
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