High-Frequency GaN Electronic Devices
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-w
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requency GaN Electronic Devices
High-Frequency GaN Electronic Devices
Patrick Fay • Debdeep Jena • Paul Maki Editors
High-Frequency GaN Electronic Devices
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Editors Patrick Fay University of Notre Dame Notre Dame, IN, USA
Debdeep Jena Cornell University Ithaca, NY, USA
Paul Maki Office of Naval Research Arlington, VA, USA
ISBN 978-3-030-20207-1 ISBN 978-3-030-20208-8 (eBook) https://doi.org/10.1007/978-3-030-20208-8 © Springer Nature Switzerland AG 2020 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors, and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. This Springer imprint is published by the registered company Springer Nature Switzerland AG. The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Preface
GaN and related materials (AlGaN, InGaN) have established themselves as a key material system for RF and microwave power electronics and are vying for the position in low-frequency power electronics applications as well. Perhaps, surprisingly, the material properties of the GaN material family are quite well-matched to the needs of ultrahigh-frequency electronics as well, with high carrier mobilities in polarization-induced 2D electron gases and comparatively high densities of states that enable both large current density and aggressive device scaling for highfrequency operation. However, scaling of conventional device architectures such as the high electron mobility transistor widely used in GaN for RF and microwave power applications is only one of the several possible routes to exceptional highfrequency performance in III-N devices. By leveraging the unique properties of the nitrides along with less conventional physical bases of operation, entirely new classes of devices with significant potential for high-frequency performance are possible. This volume brings together scientists and device engineers working on both aggressively scaled conventional transistors and unconv
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