Highly Sensitive Reconfigurable Plasmonic Metasurface with Dual-Band Response for Optical Sensing and Switching in the M
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https://doi.org/10.1007/s11664-020-08551-7 2020 The Minerals, Metals & Materials Society
Highly Sensitive Reconfigurable Plasmonic Metasurface with Dual-Band Response for Optical Sensing and Switching in the Mid-Infrared Spectrum SHOHREH MOBASSER,1 SHIMA POORGHOLAM-KHANJARI,2 MARYAM BAZGIR,3,4 and FERDOWS B. ZARRABI 3 1.—Department of Electrical and Computer Engineering, Arak University, Arak, Iran. 2.—Department of Electrical Engineering, Faculty of Technical and Engineering, Imam Khomeini International University (IKIU), Qazvin, Iran. 3.—Faculty of Engineering, Lorestan University, Khorramabad, Iran. 4.—e-mail: [email protected]
In this work, we design a plasmonic metasurface as an optical refractive index sensor with high sensitivity and switching characteristics for the mid-infrared spectral region by employing organic material with reconfigurable attributes. This structure contains a cross element at the center which is surrounded by a frame with four similar rectangular parasitic elements at each corner. The parasitic elements as plasmonic absorbers are exploited for concentrating energy and reducing the reflection from the metasurface. This plasmonic absorber is utilized to improve the figure of merit (FOM) and sensitivity of the sensor because of the semi-Fano characteristic of the reflection response. Organic materials are being employed in this technique to design the absorber due to their distinct switching characteristics inside the gaps between the parasitic elements and cross frame which can be considered for controlling electric field distribution and reflection of the metasurface. The use of organic materials reduces the reflection of the metasurface about 11 dB in comparison to the primary model without organic material. In fact, the equivalent circuit and electric field can be highlighted to describe the features of this absorber and the DNA load effects. The switching ratio is obtained 42 times, and this absorber is modified for 110 THz with a reflection of 32 dB, and the FOM obtained for the sensor is 51 RIU1, with linear variation and sensitivity of 2440 nm/RIU. Key words: Optical devices, subwavelength structures, nanostructures, surface plasmons
INTRODUCTION The collision of light with metal produces surface plasmon polaritons at the interface of the metal and dielectric, which leads to the plasmonic properties of the proposed devices in the optical spectrum.1 Many optical devices today are designed and fabricated based on this concept, such as an optical waveguide
(Received June 10, 2020; accepted October 7, 2020)
for making a memristor or a switchable transmission line,2 optical gate,3 optical absorber for nearinfrared application to design an optical sensor,4 optical switch,5 or nano-antenna with Fano response for enhancing the figure of merit (FOM) of the sensor.6 The plasmonic facet helps researchers to increase the electric field7 at the interface of metal and dielectric, which is essential for intensifying the Q factor of the sensor8 or switch based on a plasmonic metasurfac
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