Impact of Zn 2+ Doping on the Structural, Morphological and Photodiode Properties of V 2 O 5 Nanorods
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Impact of Zn2+ Doping on the Structural, Morphological and Photodiode Properties of V2O5 Nanorods N. Senthil Kumar1 · J. H. Chang2 · Mon‑Shu Ho3,4 · Babu Balraj3,4 · S. Chandrasekar3,4 · B. Mohanbabu5 · M. Gowtham6 · Donghui Guo5 · K. Mohanraj2 Received: 14 July 2020 / Accepted: 9 September 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In the present study, the effects of Zn2+ doping on the microstructural, morphological and photodiode response of the V2O5 nanorods have been studied. Pure and Zn2+ doped V2O5 nanorods were prepared by a simple and cost effective wet chemical solution process. The XRD studies confirmed that the pure and Zn2+ doped samples exhibit crystalline nature with mixed phases for Zn doping. From the morphology analysis, it is observed that substitution of Zn2+ into the V2O5 matrix is found to gradually transform the morphology from hexagonal face rods to short rods mixed with the plate like structures. The luminescence features of nanostructures are analyzed using photoluminescence studies. Moreover, the V2O5/p-Si and ZnV2O5/p-Si photodiodes parameters were studied under dark and light environments. Keywords Phase change · Doping · Morphological · Junction diode · Nanorods
1 Introduction
* N. Senthil Kumar [email protected] * B. Mohanbabu [email protected] * K. Mohanraj [email protected] 1
PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamil Nadu 641029, India
2
Department of Environmental Engineering and Management, Chaoyang University of Technology, Taichung 41349, Taiwan
3
Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
4
Innovation and Development Center of Sustainable Agriculture (IDCSA), National Chung Hsing University, Taichung 40227, Taiwan
5
Department of Electronic Engineering, School of Electronic Science and Technology, Xiamen University, Xiamen 361005, China
6
Department of Physics, Sri Ramakrishna College of Arts and Science, Peelamedu, Tamil Nadu 641006, India
As one of the excellent semiconductor materials, vanadium pentoxide ( V2O5) is deliberated to be a vital n-type semiconductor. Because it has exclusive electrical properties and thus has been used in the semiconductor industry. In the context, vanadium oxides are a superior variety of oxidation states, for instance, VO (V2+), V2O3 (V3+), VO2 (V4+), and V2O5 (V5+). These oxide states are reliant on the atmospheric conditions. Consequently, the phase change can occur between their oxides by the atmosphere. Among the different oxide phases, the V2O5 oxide phase is considered for real time applications as it is regarded as the most oxidized state and, thus, stable oxide phase. Subsequently, it expands applications not limited to Li+ batteries, memory devices, solar cells, Sensors, electrical and optical switching devices [1–18], etc. The V2O5 nanoparticles are to be synthesized by various methods such as precipitation [19], thermal decomposition [7], a sol
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