Improvement of the interface quality between Zn (O,S,OH) x buffer and Cu(InGa)(SeS) 2 surface layers to enhance the fill
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1123-P07-01
Improvement of the interface quality between Zn(O,S,OH)x buffer and Cu(InGa)(SeS)2 surface layers to enhance the fill factor over 0.700 K. Kushiya, Y, Tanaka, H. Hakuma, Y. Goushi, S. Kijima, T. Aramoto, Y. Fujiwara, A. Tanaka, Y. Chiba, H. Sugimoto, Y. Kawaguchi and K. Kakegawa CIS Development Group, New Business Development Div., Showa Shell Sekiyu K.K., 123-1, Shimo-kawairi, Atsugi, Kanagawa, JAPAN ABSTRACT For realizing the proof of mass production capability or a move toward a GW/a production, 16%-efficiency project has been started setting the target of each parameter as Voc: 0.685 V/cell, FF: 0.735 and Jsc: 31.8 mA/cm2. Up to FY2008, the target of each parameter independently has been achieved except the efficiency. All of our research works is currently focused on the FF in order to achieve the FF of over 0.73 consistently by adjusting the two resistances (Rsh and Rs) in the monolithically integrated 30cmx30cm-sized circuits. To improve the FF, double buffer structure with CBD-Zn(O,S,OH)x and MOCVD-ZnO is proposed and the thickness is adjusted by optimizing the Rs and the Rsh. As the result, FF of over 0.7 has been achieved for the first time in our CIS R&D since FY1993. INTRODUCTION Showa Shell Solar K.K., a 100 % subsidiary of Showa Shell Sekiyu K.K., has started up the second Cu(InGa)(SeS)2 (CIS)-based thin-film PV plant of annual production capacity of 60 MW/year this November. The plant is currently in the initial test run stage. While, the first plant of annual production capacity of 20 MW/year, which started up in October, FY2006, is improving both the performance and the production yield. By the middle of 2009, two manufacturing plants will be in full operation. This means that we could successfully transfer our CIS-based thin-film Photovoltaics (PV) technology developed under PV-R&D projects by the New Energy and Industrial Technology Development Organization (NEDO) from FY1993 to FY2005 at the Atsugi Research Laboratory (ARL) with an at most 2 MW/year R&D line, which could achieve the average efficiency of 12 % on a 30cmx120cm-sized glass substrate. In the first plant, the substrate size was employed twice larger, 60cmx120cm size to reduce the production cost. The production know-how, lessons and operational experiences obtained in the first plant were all transferred to the three-times larger second plant combining with our baseline manufacturing technology. The CIS-based thin-film PV module from the production line of the first plant demonstrated the module (aperture-area) efficiency of 13.1 % measured by the National Institute of Advanced Industrial Science and Technology (AIST) as shown in Table 1. This achievement was recognized that our baseline manufacturing technology developed in the R&D stage at the ARL was successfully transferred to the first plant. In Table 1, the device structure is common and was prepared by the baseline manufacturing process described in detail elsewhere [1,2], i.e. the stacked structure of ZnO:B (BZO) window by a metal-organic chemical vapor deposition
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