Ink-Jet Printed Cu/Cu x O/Ag ReRAM Memory Devices Fabricated on Flexible Substrate
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Ink-Jet Printed Cu/CuxO/Ag ReRAM Memory Devices Fabricated on Flexible Substrate Simin Zou1 and Michael C. Hamilton1* 1 Deparment of Electrical and Computer Engineering, Auburn University, 200 Broun Hall, Auburn University, AL 36849, U.S.A. *Corresponding Author E-mail: [email protected], Tel: 334-844-1879 ABSTRACT Recently, flexible electronics is attracting growing attention due to its various properties such as lightness and flexibility, which cannot be replaced by rigid electronics. In this study, we investigate flexible ink-jet printed Cu/CuxO/Ag capacitor-like structure that exhibits bipolar resistive switching behavior under direct current voltage sweeps. A vaccum-free and low temperature process is used to fabricate this ReRAM memory device, which allows straightforward fabrication and a structure for characterization of the possible use of CuxO as an insulating layer in these devices. Our device displays a resistive switching ratio greater than 30 between the high resistance and low resistance state at room temperature. The devices exhibit metallic behavior in the low resistance state and a semiconductor behavior is found in the initial and high resistance states as observed in temperature dependent resistance measurements. The resistive switching mechanism of the fabricated structures is explained by the formation and rupture of conductive filament paths. INTRODUCTION While traditional memory devices are approaching scaling limits, resistive random access memory (ReRAM), as one of the promising candidates of the next generation of non-volatile memories, has attracted increasing attention due to its potential advantages including high speed switching, simple structure, low power consumption, low cost and excellent scalability. Moreover, ReRAM and memristor-type devices have a wide range of applications such as signal processing, programmable logic [1], neuromorphic circuitry [2], and functional non-volatile memory. Over the past decades, resistive switching behaviors has been observed in various materials such as transition metal oxides (e.g., TiO2 [3], HfOx [4]), organic materials [5], and perovskite-type oxides [6]. Among these materials, transition metal oxides have the competitive advantages of being compatible with standard metal oxide semiconductor (MOS) technology. Up to now, various resistive switching models have been suggested, including formation and rupture of localized conductive filament paths [7], Schottky barrier with interface states [8] and migration of oxygen deficiencies [9]. However, additional experimental and theoretical work is required to help understand the exact physical mechanism leading to the observed resistive switching in some of these devices. In this study, we demonstrate bipolar resistive switching (BRS) in ink-jet printed Cu/CuxO/Ag (1
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