Metal-Organic chemical vapor deposition of BN on sapphire and its heterostructures with 2D and 3D materials
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Metal-Organic chemical vapor deposition of BN on sapphire and its heterostructures with 2D and 3D materials Qing Paduano and Michael Snure MRS Advances / FirstView Article / July 2016, pp 1 - 11 DOI: 10.1557/adv.2016.521, Published online: 21 July 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116005211 How to cite this article: Qing Paduano and Michael Snure Metal-Organic chemical vapor deposition of BN on sapphire and its heterostructures with 2D and 3D materials. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.521 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.521
Metal-Organic chemical vapor deposition of BN on sapphire and its heterostructures with 2D and 3D materials Qing Paduano1 and Michael Snure1 1 Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH 45433, USA ABSTRACT We studied MOCVD processing for direct growth of BN on 2” sapphire substrates as a template for heterostructures with two dimensional (2D) and three dimensional (3D) materials. The combined experimental evidence points to three growth modes for BN: self-terminating, 3D random, and layer-by-layer, all of which are dependent on V/III ratio, temperature, pressure, and substrate surface modification via nitridation. At moderate temperature (950-1050°C), BN growth using high V/III ratio is self-terminating, resulting in c-oriented films aligned in-plane with respect to the orientation of the sapphire substrate. BN films grown under low V/III ratios are 3D, randomly oriented, and nano-crystalline. At higher temperature (1100°C), selfterminating growth transitions to a continuous layer-by-layer growth mode. When BN growth is self-terminating, films exhibit atomically smooth surface morphology and highly uniform thickness over a 2” sapphire wafer. Using these BN/sapphire templates we studied the growth of 2D and 2D/3D heterostructures. To study direct growth of 2D on 2D layered material we deposited graphene on BN in a continued process within the same MOCVD system. Furthermore, we explore the growth and nucleation of 3D materials (GaN and AlN) on BN. AlGaN/GaN based high electron mobility transistor (HEMT) structures grown on BN/sapphire exhibited two-dimensional electron gas characteristics at the AlGaN/GaN heterointerface, with room-temperature electron mobility and sheet electron density about 1900cm2/Vs and 1x1013cm2 , respectively. INTRODUCTION The development of heterostructures based on two dimensional (2D), graphene, BN, MoS2, ect., and three dimensional (3D), GaN, AlN, ect., has attracted a great deal of interest for future electronic and optical devices. In particular, sp2 bonded BN is of interest in these heterostructures due to its structural similarity to graphene, wide band gap, good dielectric properties
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