Modelling of Sb Activation in Ultra-shallow Junction Regions in Bulk and Strained Si
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1070-E03-05
Modelling of Sb Activation in Ultra-shallow Junction Regions in Bulk and Strained Si Yan Lai, Nicolas Cordero, and James C Greer Tyndall National Institute, Cork, Ireland ABSTRACT The activation behaviour of dopants in ultra-shallow junctions on strained silicon is investigated from a simulation vantage point. Process models available in commercial simulation tools are typically developed for junctions formed with high implantation energies (> 50 keV) and for long anneal times. Hence the question arises as to whether these models and parameter sets can accurately predict the active profile for highly doped, ultra-shallow junctions formed thin strained silicon layers using short rapid thermal anneals (RTA,
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