Numerical junction temperature calculation method for reliability evaluation of power semiconductors in power electronic
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ORIGINAL ARTICLE
Numerical junction temperature calculation method for reliability evaluation of power semiconductors in power electronics converters Xiao Du1 · Xiong Du1 · Jun Zhang2 · Gaoxian Li1 Received: 29 May 2020 / Revised: 3 September 2020 / Accepted: 4 September 2020 © The Korean Institute of Power Electronics 2020
Abstract The junction temperature of power semiconductors is a critical parameter during reliability evaluation. The incorporation of long-term mission profiles, such as power loadings and ambient temperature, into lifetime and reliability evaluations of power semiconductors increases the computational burden. Thus, there is an urgent need for a more accurate method for junction temperature acquisition. Current methods for junction temperature calculation are computationally inefficient and do not comprehensively incorporate long-term factors into junction temperature calculation and power semiconductor reliability evaluation. Here, a junction temperature calculation method is proposed that enables reliability evaluation for insulated gate bipolar transistor (IGBT) power semiconductors. This approach calculates the IGBT module junction temperature on the basis of an electro-thermal analogy using Gauss–Seidel iteration. When compared with electrical–thermal simulation and other numerical calculation methods, the proposed method guarantees accuracy, while greatly reducing the computational time and load. A performance comparison between the proposed method, electro-thermal simulation based on a Fuji IGBT simulator, and experimental results was carried out using a three-phase DC/AC inverter as a case study. Keywords Insulated bate bipolar transistor · Junction temperature · Semiconductor reliability
1 Introduction Insulated gate bipolar transistor (IGBT) modules are widely used in harsh working environments, including off-shore wind generation, electric vehicles, and railway traction systems [1, 2]. However, IGBT modules are thought to be one of the weakest components in power electronics converters [3]. Junction temperature fluctuation is a leading cause of IGBT failure [4]. Thus, determination of the junction temperature in IGBT modules is vital to understanding their reliability and for enhancing the performance of power electronics converters [5, 6]. Thus, accurate estimation of the junction temperature in IGBT modules is critical when assessing their reliability [5]. Unfortunately, the current
* Xiong Du [email protected] 1
The State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China
College of Energy and Electrical Engineering, Hohai University, Nanjing, China
2
methods of estimating junction temperature are cost- and technically ineffective [7, 8]. There are two main methods for estimating junction temperature: junction temperature measurement and junction temperature calculation. Junction temperature measurement can be direct or indirect. Direct measurement often uses infrared cameras [9]. This appr
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