Optimization of the pressure distribution in press-pack insulated gate bipolar transistors
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INDUSTRIAL APPLICATION PAPER
Optimization of the pressure distribution in press-pack insulated gate bipolar transistors Z. L. Huang 1 & T. G. Yang 1 & C. B Li 2 & J. Zheng 3 & W. X He 1 Received: 7 March 2020 / Revised: 21 June 2020 / Accepted: 4 August 2020 # Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract The performance of press-pack insulated gate bipolar transistors (IGBTs) is greatly affected by the unbalanced pressure distribution. However, it is not feasible to apply engineering optimization methods to address the IGBT design problems because of the complexity of high-dimensional optimization involving the time-consuming simulation models. This paper proposes a practical structural design optimization (SDO) method, aiming to enhance the uniformity of the pressure distribution for the existing products of press-pack IGBTs. A concept of pressure balance factor (PBF) is first defined based on the stress distribution analysis of the IGBT, which establishes a direct link between the stress and structure of each sub-module. A PBF distribution function is formulated to reduce the dimension of the design problem. A parameterized SDO model is presented, which can be solved by classic algorithms by automatically calling the finite element model (FEM). This method is applied to a design problem of the actual press-pack IGBT with 44 sub-modules. Numerical results and an experiment show that it is with great practical potential because of the advantages of efficiency and operability. Keywords Structural design optimization . Press-pack insulated gate bipolar transistor . Dimensionality reduction
1 Introduction Insulated gate bipolar transistor (IGBT) is one of the widely used voltage source inverters in motor drive and power quality application due to their high voltage/current ratings and ability to handle short circuit currents for periods (Lu and Sharma 2009). Recently, press packaging technology has been applied to IGBTs for high voltage and high power density applications, such as electric locomotives and high voltage direct current transmission (Uchida et al. n.d.; Deng et al. 2018). The concept of the press-pack IGBT originated from the μ-stack proposed
Responsible Editor: Emilio Carlos Nelli Silva * T. G. Yang [email protected] 1
Key Laboratory Energy Monitoring and Edge Computing of Smart City, Hunan City University, Yiyang 413002, Hunan Province, China
2
College of Electrical and Information Engineering, Hunan University, Changsha 410082, Hunan Province, China
3
College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, Hunan Province, China
by FUJI in 1993, and the leading manufacturers include ABB, TOSHIBA, FUJI, and WESTCODE (Deng et al. 2017a). Compared with traditional wire-bonded IGBTs, press-pack IGBTs seemingly have a better prospect in engineering applications because of their higher reliability, double side cooling, higher power density, and easy to connect in series (Wakeman et al. 2000). Although the IGBTs are relatively rugged, their perfor
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