An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit
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An insulated gate bipolar transistor with three‑layer poly gate for improved figure of merit Namrata Gupta1 · Sarita Singh1 · Alok Naugarhiya1 Received: 31 March 2020 / Accepted: 26 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In this study, an insulated gate bipolar transistor (IGBT) with three-layer poly gate is proposed and investigated by TCAD simulation. Here, gate is spilt in two different workfunction materials of N+ poly ( 𝜙g = 4.17 eV) and P+ poly ( 𝜙g = 5.25 eV). Lower workfunction poly layer is sandwiched between higher workfunction poly, connected via a single metal. The gate oxide thickness is varied in x-direction. This leads to improvement in transconductance and reduction in miller capacitance. Thin oxide near the emitter serves good control over the charge carriers in the channel. This deployment of dual material gate in proposed device results in 36% reduction in area-specific on-resistance without any degradation in breakdown voltage. In addition to this, proposed device exhibits improved transient characteristics with 18.5% and 60% reduction in turn-off time and delay, respectively, as compared to conventional device. Further, the turn-off energy loss is reduced by 23.5% and 29.09% reduction in on-state voltage drop is achieved. Furthermore, proposed device offers 23%, 58%, and 30% improvement in FOM1, Baliga figure of merit (BFOM), and FOM2, respectively.
1 Introduction In recent scenario, high and medium power systems need a device having better power handling and higher current carrying capability. Insulated gate bipolar transistor (IGBT) is most useful in power systems such as traction, lamp ballasts, electric vehicle drives, and switched mode power supplies (SMPS) [1]. The conduction mechanism of IGBT is based on MOSFET and BJT operation with lower on-resistance as compared to power MOSFETs. Due to wide application of IGBT in power electronic systems, researchers are continuously working to enhance the trade-off between turnoff energy loss (Eoff) and on-state voltage drop (Von) with reduced area-specific on-resistance ( Ron .A ) for different power switching applications [2] (Fig. 1). In 2019, Chen et al. proposed an opposite-doped islands (low-doped P region) in N-drift region to reduce the energy
* Namrata Gupta [email protected] Sarita Singh [email protected] Alok Naugarhiya [email protected] 1
NIT Raipur, Raipur, India
loss at same value of breakdown voltage (BV) [3]. A trench split gate structure incorporated with floating p body offers high injection enhancement and lower gate-to-collector capacitance with 15% reduced energy loss [4]. Recently, Elsayed et al. presented an IGBT structure with ultra-thin pure boron collector to reduce the area-specific on-resistance, switching and lower energy loss [5]. In 2017 [6], a simplified fabricated anode side SJ IGBT structure is investigated in which P pillars are designed such that they do not touch p body in N-drift. Due to this arrangement of pillars, device o
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