Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina
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Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina G.S. Cheng, L.D. Zhang, S.H. Chen, Y. Li, L. Li, X.G. Zhu, Y. Zhu, and G.T. Fei Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People’s Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People’s Republic of China
Y.Q. Mao Nanjing Institute of Geology and Palaeontology, Chinese Academy of Sciences, Nanjing 210008, People’s Republic of China (Received 19 March 1999; accepted 25 October 1999)
Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina was synthesized through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 1273 K in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, x-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of single-crystalline hexagonal wurtzite GaN nanowires in the uniform pores of anodic alumina about 20 nm in diameter and 40–50 m in length. The growth mechanism of the ordered nanostructure is discussed. The photoluminescence spectrum of this nanostructure is also reported.
I. INTRODUCTION
The fabrication of ordered nanostructures has attracted considerable attention1–3 because of their great potential for testing and understanding fundamental concepts about the roles of orderliness, dimensionality, and size in optical, electrical, magnetic, and mechanical properties and for the applications in ultrathin colorful light emission display devices and colorful copier instruments. On the other hand, GaN-based materials have been the subject of intensive research for blue and ultraviolet light emission4,5 and high-temperature/high-power electronic devices.6,7 Much effort has been made to synthesize GaN membranes,8 nanoparticles,9 and nanorods or nanowires.10 To the best of our knowledge, few reports about ordered array of the GaN nanowires were found to date. Here, we demonstrate an interesting approach by which the ordered nanostructure of the single-crystalline GaN nanowires was fabricated in the honeycomb structure of anodic alumina. II. EXPERIMENTAL
The two-step fabrication method was employed to synthesize the ordered nanostructure of the singlecrystalline GaN nanowires in the honeycomb structure of anodic alumina. The first step was to synthesize the ordered nanostructure substance, and then the singlecrystalline GaN nanowires were assembled into each of the highly ordered honeycomb pores of the anodic alumina through a gas reaction. J. Mater. Res., Vol. 15, No. 2, Feb 2000
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The alumina membrane was fabricated by means of anodization.11,12 Briefly, annealed in vacuum (773 K) and degreased in acetone, highly pure Al plate (99.999%) was anodized in 0.3 M sulfuric acid solution a
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