Synthesis of SiC Nanowires via Controllable Anodic Etching Time
- PDF / 2,391,564 Bytes
- 8 Pages / 595.276 x 790.866 pts Page_size
- 57 Downloads / 197 Views
Synthesis of SiC Nanowires via Controllable Anodic Etching Time Khaled M. Chahrour1 · M. R. Hashim1 Received: 21 March 2020 / Accepted: 28 May 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Porous SiC (PSC) was successfully synthesized via UV-assisted pulsed current anodic etching of hexagonal n-type silicon carbide (6H–SiC) substrate using different etching times. The micromorphological and structural characterizations of PSC were reported. Field-emission scanning electron microscopy (FESEM) results established that the etching time can be considered as a significant etching parameter that controls the micromorphology aspects of the porous SiC specimens. Furthermore, the adjustment of etching time can convert SiC pores into nanowire structures. Raman spectroscopy characterization was performed as well, where the shape of the Raman spectra was analyzed, in precise the transverse optical E1 (TO) and the longitudinal optical A1 (LO) peaks, which correlate powerfully with the porous SiC micromorphology. This simplistic synthesis may be considered as a potential and affordable technique to synthesize SiC nanowires for extensive applications. Keywords 6H–SiC · Anodic etching · SiC nanowires · Raman spectroscopy
1 Introduction In recent times, the need for specialized device applications has guided research on the fabrication of porous semiconductor compounds. The most important benefit of these compounds for surface applications is the nanopatterned porous surface that appears as a sink to handle threading dislocations and strain to attain a corresponding surface with lower dislocation densities and strain [1, 2]. Silicon carbide (SiC) is specially selected to fabricate light-emitting diodes (LED) from UV to blue spectrum as it possesses vital characteristics such as a few lattice incongruity and low thermal expansion coefficient for epitaxial layers [3, 4]. Furthermore, the benefits of SiC large band gap, its superior chemical inertness and its insensitivity to thermal changes made it an excellent choice for practice in nano-optoelectronic devices which may function in extreme ambiances [5–9]. Porous SiC (PSC) has developed a significant value and gained more substantial attention due to its vast internal surface area and great action in surface reactions. As a result, * Khaled M. Chahrour [email protected] * M. R. Hashim [email protected] 1
School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
PSC layers are utilized as prospective sensing materials, mainly for its uniquely advanced adsorptive features [10, 11]. In addition, the notable photoluminescence (PL) intensity and consistency of the optical properties of PSC can further help extend its practice in the domain of optoelectronics [12, 13]. Etching is a vital method for fabrication of PSC. Lately, dry etching techniques based on inductively coupled plasma and electron cyclotron have been mainly used [14, 15]. Contrariwise, these techniques are costly and overly sophisticated, which poses as a high risk in surface destr
Data Loading...
