Patterning of dielectric oxide thin layers by microcontact printing of self-assembled monolayers
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P.G. Clem Department of Materials Science and Engineering, Fredrick Seifz Materials Research Laboratory, and Beckman Institute fiir Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urhana, Illinois 61801
R. G. Nuzzo") School of Chemical Sciences, Fredrick Seitz Materials Research Luboratory, University of Illinois at Urbana-Champaign, Urbunu, Illinois 61801
D.A. Payne") Department ($Muterials Science and Engineering, Frederick Seitz Materials Research Laboratory, and Beckman Insfitufe,j%r Advanced Science and Technology, University of Illinois at Urbann-Champaign, Urbarza, Illinois 61801
(Received 31 July 1995; accepted 8 September 1995) This communication describes a technique used to pattern oxide thin layers using microcontact printing ( pCP) and sol-gel deposition. The technique involves p C P of self-assembled monolayers (SAM's) of alkylsiloxane on various substrates (SiO,/Si, sapphire, ITO, and glass), followed by deposition of oxide thin layers from sol-gel precursors. Delamination of oxide layers from SAM-derivatized regions allows selective deposition of crystalline dielectric oxide layers on underivatized regions. To demonstrate the viability of this technique for integrated microelectronics and optics applications, patterned ( Pb, La)TiO? ( PLT) and LiNb03 layers were deposited on sapphire, silicon, and indium tin oxide (ITO) substrates. Use of lattice-matched substrates allows lithography-free deposition of patterned heteroepitaxial oxide layers. Strip waveguides of heteroepitaxial LiNb03 with 4 p m lateral dimensions were fabricated on sapphire. Dielectric measurements for patterned PLT thin layers on I T 0 are also reported.
This communication describes the use of microcontact printing ( P C P ) ' - ~ to define and direct the patterned deposition of oxide thin layers by sol-gel methods on a variety of technologically relevant substrate surfaces. Microcontact printing of alkylsiloxane monolayers4 and their application in selective deposition of nickel (by electroless plating)' and copper [by chemical vapor deposition (CVD)I5 has been previously reported. The ability of p C P to form patterned self-assembled monolayers (SAM's) of high quality on metal and nonmetal (SiO,/Si, sapphire, ITO, and glass) surfaces is well established. This ability to pattern surfaces with SAM's suggests a new approach to patterning thin oxide layers by sol-gel processing, which heretofore has not been possible, with potential resolution ranging upwards from the nanoscale. In the present report we demonstrate the facile preparation of integrated oxide thin layer structures with feature sizes varying from 4 p m to 1 cm resolution. Combining the flexibility of the p C P process and the ease
"Author to whom correspondence should be addressed. 2996
J. Mater. Res., Vol. 10, No. 12, Dec 1995
http://journals.cambridge.org
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of dielectric thin layer preparation by sol-gel deposition allows a wide range of potential applications in technology. Two specific applications of the t
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