Photoemission from Optoelectronic Materials and their Nanostructures
Photoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI,
- PDF / 11,576,826 Bytes
- 340 Pages / 439.37 x 666.142 pts Page_size
- 42 Downloads / 200 Views
A volume in the Nanostructure Science and Technology series. Further titles in the series can be found at: http://www.springer.com/series/6331
Kamakhya Prasad Ghatak · Debashis De · Sitangshu Bhattacharya
Photoemission from Optoelectronic Materials and their Nanostructures
123
Kamakhya Prasad Ghatak Department of Electronic Science The University of Calcutta Kolkata, West Bengal 700009 India [email protected]
Debashis De Department of Computer Science and Engineering West Bengal University of Technology Salt Lake City Kolkata 700064 India [email protected]
Sitangshu Bhattacharya Nano Scale Device Research Laboratory Centre for Electronics Design and Technology Indian Institute of Science Bangalore 560012 India [email protected]
ISBN 978-0-387-78605-6 e-ISBN 978-0-387-78606-3 DOI 10.1007/978-0-387-78606-3 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2009928695 © Springer Science+Business Media, LLC 2009 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
To Professor Somenath Sarkar for his invaluable inspiration, selfless advice and research-proactive leadership
Preface
The creation of quantized structures like quantum wells (QWs) in ultrathin films (UFs), quantum well wires (QWWs), and quantum dots (QDs) is due to two factors: • reduction of the symmetry of the wave-vector space of the charge carriers in electronic materials having various band structures, and • emergence of modern fabrication techniques like molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), fine line lithography (FLL), etc. Quantized structures have garnered much interest in nanoscience because of their promise for unearthing both new scientific revelations and new technological applications. In QWs in UFs, the quantization of the motion of the carriers in the direction perpendicular to the film exhibits the two-dimensional behavior of the charge carriers. Another new structure known as a QWW has been proposed to investigate the physical properties in these materials where the carrier gas is quantized in two transverse directions and they can move only in the longitudinal direction. As the concept of quantization increases from 1D to 3D, the degree of freedom of the free carriers annihilates t
Data Loading...
