Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes
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Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes Fulya Esra CI˙MI˙LLI˙ C ¸ ATIR1,* 1
Department of Electronic Technologies, Vocational School, Erzincan Binali Yildirim University, 24200 Erzincan, Turkey
Received: 6 July 2020
ABSTRACT
Accepted: 5 November 2020
In this study, the reduced graphene oxide (rGO) was synthesized from graphene oxide (GO) by using chemical reduction method. The spray pyrolysis technique was used to deposit rGO film on n-InP substrate. The structural, morphological, and optical properties of rGO film were investigated by XRD, SEM, and UV–Vis spectroscopies. Au/rGO/n-InP device was fabricated and the current–voltage characteristics were examined in the temperature range of 60–300 K. The device parameters of barrier height (BH) and ideality factor are found to be strong functions of temperature due to the barrier inhomogeneities at metal–semiconductor interface. The temperature dependency of the electrical characteristics of the Au/rGO/n-InP SBD was explained by the thermionic field emission (TFE) theory with Gaussian distribution (GD) of the BH values. The BH has a GD with a mean barrier height of Ubo = 0.93 eV between 120 and 300 K temperatures and Ubo = 0.62 eV between 60 and 120 K temperatures. It was seen that the existing current mechanism is predominantly controlled by spacecharge-limited current (SCLC) at large forward bias according to the sample temperature. The rGO interface plays also an important role in the conduction mechanism and electronic properties of the device.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Graphene, as a 2D material, is the most attractive member of carbon-based materials due to its significant electrical, optical, and mechanical properties [1]. Moreover, graphene is the strongest, stiffest and thinnest material ever known with ultra-large specific surface area. As a result, graphene-based composites, 2D film materials, and coated substrates are
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https://doi.org/10.1007/s10854-020-04843-0
extensively explored in electronic circuit industry. On the other hand, the zero-band gap of graphene limits its use in nano-electronics, such as field-effect transistors [2]. Recently, the graphene oxide (GO) and reduced graphene oxide (rGO) have become the standard graphene precursors because a gradual reduction of oxygen concentration of graphene oxide is known as an alternative way to tune the band gap of graphene.
J Mater Sci: Mater Electron
Many graphene synthesis methods have been developed academically and industrially and still in progress. The most usual methods are obtaining graphene by chemical reduction, such as sodium boron hydride or hydrazine or by thermal reduction of graphene oxide by exposure to high temperatures which is called reduced graphene oxide (rGO) [1]. While the graphene oxide is reduced to reduced graphene oxide by thermal method, the sample needs to be annealed at
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